Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier

• US 6,347,049 B1
• Filed: 07/25/2001
• Issued: 02/12/2002
• Est. Priority Date: 07/25/2001
• Status: Expired due to Term

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Schwickert, Markus, Childress, Jeffrey R., Gurney, Bruce A.
• Primary Examiner(s): Tran, Andrew Q.
• Application Number:
  US09/916,077
• Time in Patent Office: 202 Days
• Field of Search: 365/173, 365/171, 365/158, 360/324.2
• US Class Current: 365/173
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A low resistance magnetic tunnel junction (MTJ) device has a bilayer or multilayer as the insulating tunnel barrier. In one embodiment the tunnel barrier is a bilayer of a first layer of magnesium oxide on the bottom magnetic electrode and an aluminum oxide layer on the magnesium oxide layer. This bilayer is formed by oxidizing a bilayer of Mg/Al. In a second embodiment the tunnel barrier is a bilayer of first layer of aluminum nitride and a second layer of aluminum oxide on top of the aluminum nitride first layer, with this bilayer formed by oxidizing a bilayer of AlN/Al. MTJ devices with trilayer barriers, such as AlN/Al₂O₃/AlN, MgO/Al₂O₃/MgO and Al₂O₃/MgO/Al₂O₃ are also possible. The resulting magnetic tunnel junction devices have resistance-area values less than 1000 Ω(μm)² and preferably in the range of 0.1 to 100 Ω(μm)², making the devices suitable for magnetic read sensors.

Claims

1. A magnetic tunnel junction device comprising:

a first ferromagnetic layer and a second ferromagnetic layer, one of the ferromagnetic layers having its magnetic moment fixed in a preferred direction in the presence of an applied magnetic field in the range of interest and the other of the ferromagnetic layers having its magnetic moment free to rotate in the presence of the applied magnetic field in the range of interest; and

a tunnel barrier layer located between the first and second ferromagnetic layers, the tunnel barrier layer comprising a first barrier layer of insulating material formed on and in contact with the first ferromagnetic layer and a second barrier layer of insulating material different from the material of the first barrier layer and located between the first barrier layer and the second ferromagnetic layer;

and wherein the magnetic tunnel junction device has a resistance-area value less than approximately 1000 Ω

(μ

m)².

2. The magnetic tunnel junction device according to claim 1 wherein the device is a magnetoresistive read head.

3. The magnetic tunnel junction device according to claim 1 wherein the device is a magnetic memory cell.

4. The magnetic tunnel junction device according to claim 1 wherein the first ferromagnetic layer has its magnetic moment fixed and further comprising a layer of antiferromagnetic material in contact with the fixed ferromagnetic layer for pinning the magnetic moment of the fixed ferromagnetic layer.

5. The magnetic tunnel junction device according to claim 1 wherein the magnetic moments of the first and second ferromagnetic layers are oriented generally perpendicular to one another in the absence of the applied magnetic field.

6. The magnetic tunnel junction device according to claim 1 wherein the magnetic moments of the first and second ferromagnetic layers are oriented generally parallel or antiparallel to one another in the absence of the applied magnetic field.

7. The magnetic tunnel junction device according to claim 1 wherein the first barrier layer is magnesium oxide and the second barrier layer is aluminum oxide.

8. The magnetic tunnel junction device according to claim 7 further comprising a third barrier layer formed of magnesium oxide and located between and in contact with the second barrier layer of aluminum oxide and the second ferromagnetic layer.

9. The magnetic tunnel junction device according to claim 1 wherein the first barrier layer is aluminum nitride and the second barrier layer is aluminum oxide.

10. The magnetic tunnel junction device according to claim 9 further comprising a third barrier layer formed of aluminum nitride and located between and in contact with the second barrier layer of aluminum oxide and the second ferromagnetic layer.

11. The magnetic tunnel junction device according to claim 9 wherein the first aluminum nitride layer has a thickness in the range of approximately 2 to 7 Angstroms.

12. The magnetic tunnel junction device according to claim 1 wherein the first barrier layer is boron nitride and the second barrier layer is boron oxide.

13. A magnetic tunnel junction read sensor comprising:

a first electrical lead;

a fixed ferromagnetic layer having a magnetic moment that is fixed in a preferred direction in the presence of an applied magnetic field in the range of interest;

an antiferromagnetic layer between the first lead and the fixed ferromagnetic layer for pinning the magnetic moment of the fixed ferromagnetic layer in its fixed direction;

a free ferromagnetic layer whose magnetic moment is free to rotate in the presence of the applied magnetic field in the range of interest;

a bilayer insulating tunnel barrier layer located between the fixed and free ferromagnetic layers, the bilayer consisting of a first layer consisting essentially of aluminum nitride on and in contact with the fixed ferromagnetic layer and a second layer consisting essentially of aluminum oxide located between and in contact with the aluminum nitride layer and the free ferromagnetic layer; and

a second electrical lead on the free ferromagnetic layer; and

wherein the magnetic tunnel junction read sensor has a resistance-area value in the range of approximately 0.1 to 100 Ω

(μ

m)².