Magnetoresistive element and magnetic recording apparatus
First Claim
1. A magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film;
- one of said first and second magnetic films including a first ferromagnetic metal layer;
a first non-metal layer provided on said first ferromagnetic metal layer;
a second non-metal layer provided on said first non-metal layer and different in composition from said first non-metal layer; and
a second ferromagnetic metal layer provided on said second non-metal layer;
said first and second non-metal layers being an electron reflecting layer.
1 Assignment
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Accused Products
Abstract
A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.
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Citations
20 Claims
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1. A magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film;
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one of said first and second magnetic films including a first ferromagnetic metal layer;
a first non-metal layer provided on said first ferromagnetic metal layer;
a second non-metal layer provided on said first non-metal layer and different in composition from said first non-metal layer; and
a second ferromagnetic metal layer provided on said second non-metal layer;
said first and second non-metal layers being an electron reflecting layer. - View Dependent Claims (9, 10, 11)
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2. A magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film;
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one of said first and second magnetic films including a first ferromagnetic metal layer;
a second ferromagnetic metal layer provided on said first ferromagnetic metal layer and different in composition from said first ferromagnetic metal layer;
a non-metal layer provided on said second ferromagnetic metal layer; and
a third ferromagnetic metal layer provided on said non-metal layer;
said non-metal layer being an electron reflecting layer. - View Dependent Claims (12, 13)
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3. A magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film;
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one of said first and second magnetic films including a first ferromagnetic metal layer;
a first non-metal layer provided on said first ferromagnetic metal layer;
a second ferromagnetic metal layer provided on said first non-metal layer;
a second non-metal layer provided on said second ferromagnetic metal layer; and
a third ferromagnetic metal layer provided on said second non-metal layer;
said first and second non-metal layers being an electron reflecting layer. - View Dependent Claims (14, 15)
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4. A magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film;
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one of said first and second magnetic films including;
a first ferromagnetic metal layer containing at least one element selected from the group consisting of lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), phosphorus (P), potassium (K), calcium (Ca), scandium (Sc), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), cesium (Cs), barium (Ba) and elements belonging to the lanthanide series by not less than 1%, a non-metal layer formed on said first ferromagnetic metal layer; and
a second ferromagnetic metal layer formed on said non-metal layer;
said non-metal layer being an electron reflecting layer. - View Dependent Claims (5, 16)
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6. A magnetoresistive element having a spin valve structure which includes a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film, wherein:
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one of said first and said second magnetic films includes a first ferromagnetic metal layer, a non-metal layer provided on said first ferromagnetic metal layer, and a second ferromagnetic metal layer provided on said non-metal layer, said non-metal layer being made of an antiferromagnetic material which satisfies the equation;
- View Dependent Claims (17, 18)
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7. A magnetoresistive element having a spin valve structure which includes a first magnetic film, a second magnetic film, and a non-magnetic spacer film interposed between said first magnetic film and said second magnetic film, wherein:
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one of said first and said second magnetic films includes a first ferromagnetic metal layer, a non-metal layer provided on said first ferromagnetic metal layer, and a second ferromagnetic metal layer provided on said non-metal layer, said non-metal layer being made of an antiferromagnetic material which satisfies the equation;
- View Dependent Claims (19, 20)
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8. A magnetic recording apparatus having a magnetic head for recording or reproducing information on or form a magnetic recording medium, characterized in that said magnetic head includes a magnetoresistive element,
said magnetoresistive element having a spin valve structure comprising a first magnetic film, a second magnetic film, and an non-magnetic spacer film interposed between said first magnetic film and said second magnetic film, one of said first and second magnetic films including a first ferromagnetic metal layer; - a first non-metal layer provided on said first ferromagnetic metal layer;
a second non-metal layer provided on said first non-metal layer and different in composition from said first non-metal layer; and
a second ferromagnetic metal layer provided on said second non-metal layer;
said first and second non-metal layers being an electron reflecting layer.
- a first non-metal layer provided on said first ferromagnetic metal layer;
Specification