Wiring forming method

• US 6,348,404 B1
• Filed: 07/02/1998
• Issued: 02/19/2002
• Est. Priority Date: 07/02/1997
• Status: Expired due to Term

• Current Assignee: Yamaha Corporation
• Original Assignee: Yamaha Corporation
• Inventors: Nakaya, Hiroshi, Tabara, Suguru
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Zarneke, David A.
• Application Number:
  US09/109,443
• Time in Patent Office: 1,328 Days
• Field of Search: 438/625, 438/636, 438/652, 438/656, 438/669, 438/952
• US Class Current: 438/636
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: Y10S 438/952 Utilizing antireflective layer
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49156 with selective destruction of conductive paths
• CPC Class Codes: Y10T 29/49162 by using wire as conductive path

Abstract

After a wiring material layer (14) which is made of WSi₂ or the like is formed on an insulation film covering a semiconductor substrate (10), a first antireflection coating film (16) which is made of TiON or TiN and a second antireflection coating film (18) which is made of an organic material are sequentially formed on the wiring material layer (14). Resist patterns (20a to 20c) are formed on the second antireflection coating film (18) by photolithography. The dry etching of the second antireflection coating film (18) is performed using the resist patterns (20a to 20c) as masks, after which the dry etching of the first antireflection coating film (16) is conducted using the resist patterns (20a to 20c) and patterns (18a to 18c) of the second antireflection coating film (18) as masks. The dry etching of the wiring material layer (14) is effected using the resist patterns (20a to 20c), the patterns (18a to 18c) of the second antireflection coating film (18) and patterns (16a to 16c) of the first antireflection coating film (16) as masks. The resist patterns (20a to 20c) and the patterns (18a to 18c) of the second antireflection coating film (18) are removed. Lamination layers, each including one of patterns of the wiring material layer (14) and one of the patterns of the first antireflection coating film (16), form wiring layers. The resist patterns (20a to 20c) and the patterns of the second antireflection coating film (18) may be removed after the etching of the first antireflection coating film (16), and the wring material layer (14) may be etched using the patterns of the first antireflection coating film (16) as masks.

Claims

1. A wiring forming method comprising the steps of:

forming a wiring material layer on an insulation film covering one of major surfaces of a substrate;

forming a first antireflection coating film made of Ti(O)N on said wiring material layer;

stacking a second antireflection coating film made of an organic material directly on said first antireflection coating film;

coating a resist layer on a lamination film which includes said first and second antireflection coating films, and exposing said resist laver to light in accordance with predetermined wiring patterns;

forming resist patterns by developing said resist layer which has been exposed to light;

selectively removing said second antireflection coating film by anisotropic dry etching which uses said resist patterns as masks, in order to leave patterns of said second antireflection coating film which correspond to said resist patterns;

selectively removing said first antireflection coating film by anisotropic dry etching which uses said resist patterns and the patterns of said second antireflection coating films as masks, in order to leave patterns of said first antireflection coating film which correspond to said resist patterns;

removing said resist patterns and the patterns of said second antireflection coating films, and leaving the patterns of said first antireflection coating film as they are; and

selectively removing said wiring material layer by anisotropic dry etching which uses the patterns of said first antireflection coating film as masks, in order to leave patterns of said wiring material layer which correspond to the patterns of said first antireflection coating film.

2. The wiring forming method according to claim 1, wherein lamination layers, each including one of the patterns of said wiring material layer and a corresponding one of the patterns of said first antireflection coating film, form wiring patterns.

3. The wiring forming method of claim 1 wherein the reflectivity of the lamination layer is about 3% or less.

4. The wiring forming method according to claim 1, wherein said second antireflection coating film comprises acrylic acid resin having a side chain which absorbs light of a wavelength 248 nm.

5. The wiring forming method according to claim 4, wherein said side chain includes

6. The wire forming method according to claim 5, wherein said acrylic acid resin is

7. The wiring forming method according to claim 1, wherein said wiring material layer is made of a polycide.

8. The wiring forming method according to claim 1, wherein said wiring material layer is etched with an element containing O₂.