Reference current generator with small temperature dependence
First Claim
1. A reference current generator having temperature dependence, comprising:
- a first PMOS transistor, a first NMOS transistor;
a first diode, wherein said first PMOS transistor, said first NMOS transistor and said first diode are in series connected and coupled between a power reference and a potential reference;
a second PMOS transistor having a gate terminal connected to a gate of said first PMOS transistor and thereto connected to a drain terminal of said second PMOS transistor;
a second NMOS transistor having a gate terminal connected to a gate of said first NMOS transistor and thereto connected to a drain terminal of said first NMOS transistor;
a plurality of resistors each having a respective temperature coefficient and having a respective resistance, among of said resistors having temperature coefficients thereof average to about 1/T0 for reducing the temperature dependence of the reference current generator, wherein said T0 is an operation temperature for which said resistance is measured; and
a second diode, said second PMOS transistor, said second NMOS transistor, said second diode, said second diode, and said plurality of resistors are in series connected between said power reference and said potential reference.
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Accused Products
Abstract
The current generator circuitry for providing a reference current with small temperature dependence feature is disclosed. The circuitry comprises two PMOS transistors, two NMOS transistors, two diode, as well as two resistors. The first PMOS and NMOS transistors as well as the first diode are in series connected between a power reference and a potential reference. It flows with a primary current. The second PMOS transistor has a gate terminal connected to a gate of the first PMOS transistor thereto connect to a drain terminal of the second PMOS transistor. Furthermore, the second NMOS transistor has a gate terminal connected to a gate of the first NMOS transistor thereof connecting to a drain terminal of the first NMOS transistor. The second PMOS transistor, the second NMOS transistor, the second diode, the first resistor and the second resistor are in series connected between above power reference and the potential reference to flow a reference current. Worth to note, the first resistor has a small temperature coefficient and the second resistor has a large temperature coefficient so that the temperature coefficient of the resistance is close to a critical value, 3.33E-3. As a result the reference current generator has a feature of very small temperature dependence.
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Citations
11 Claims
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1. A reference current generator having temperature dependence, comprising:
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a first PMOS transistor, a first NMOS transistor;
a first diode, wherein said first PMOS transistor, said first NMOS transistor and said first diode are in series connected and coupled between a power reference and a potential reference;
a second PMOS transistor having a gate terminal connected to a gate of said first PMOS transistor and thereto connected to a drain terminal of said second PMOS transistor;
a second NMOS transistor having a gate terminal connected to a gate of said first NMOS transistor and thereto connected to a drain terminal of said first NMOS transistor;
a plurality of resistors each having a respective temperature coefficient and having a respective resistance, among of said resistors having temperature coefficients thereof average to about 1/T0 for reducing the temperature dependence of the reference current generator, wherein said T0 is an operation temperature for which said resistance is measured; and
a second diode, said second PMOS transistor, said second NMOS transistor, said second diode, said second diode, and said plurality of resistors are in series connected between said power reference and said potential reference. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A reference current generator having temperature dependence, comprising:
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a first PMOS transistor;
a first NMOS transistor;
a first diode, wherein said first PMOS transistor, said first NMOS transistor and said first diode are in series connected between a power reference and a potential reference;
a second PMOS transistor having a gate terminal connected to a gate of said first PMOS transistor and thereto connected to a drain terminal of said second PMOS transistor;
a second NMOS transistor having a gate terminal connected to a gate of said first NMOS transistor and thereto connected to a drain terminal of said first NMOS transistor;
a first resistor having a first temperature coefficient and a first resistance;
a second resistor having a second temperature coefficient and a second resistance, said first temperature coefficient being higher than 3.33E-3 and said second temperature coefficient being lower than 3.33E-3, wherein said temperature coefficients average to about 3.33E-3 for reducing the temperature dependence of the reference current generator where the first and the second resistances are measured at 300 K; and
a second diode, said second PMOS transistor, said second NMOS transistor, said second diode, said second diode, said first resistor and said second resistor are in series connected between said power reference and said potential reference. - View Dependent Claims (9, 10, 11)
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Specification
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- Resources
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Current AssigneeTaiwan Semiconductor Manufacturing Company Limited
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Original AssigneeTaiwan Semiconductor Manufacturing Company Limited
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InventorsChih, Yue-Der
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Primary Examiner(s)Lam, Tuan T.
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Assistant Examiner(s)Nguyen, Hiep
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Application NumberUS09/550,666Time in Patent Office673 DaysField of Search327/513, 327/538, 327/351, 327/103, 327/378, 327/539, 327/543, 323/312, 323/315, 323/313US Class Current327/538CPC Class CodesG05F 3/245 producing a voltage or curr...G05F 3/262 using field-effect transist...
