Microstrip phase shifters
First Claim
Patent Images
1. Method for the manufacture of a ferroelectric device comprising the steps of:
- (a) preparing a substrate, (b) depositing a first metal conductor layer on the substrate, (c) screen printing an active ferroelectric layer on the first metal conductor layer, the active ferroelectric layer having a thickness in the range 5-20 microns, and having a plurality of holes through the active ferroelectric layer exposing the first metal conductor layor, and (d) selectively depositing a second metal conductor layer on the active ferroelectric layer, said second metal conductor layer having a first portion contacting the first metal conductor layer through the said holes, and a second portion on the surface of the active ferroelectric layer.
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Abstract
The specification describes a phase shifting microstrip device in which the ground plane electrode is formed on a substrate surface and a film of ferroelectric material with a thickness less than 200 μm is formed over the ground plane electrode. The microstrip electrode is formed over the film of ferroelectric material to produce a microstrip device with an operating voltage of less than 200 volts.
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Citations
7 Claims
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1. Method for the manufacture of a ferroelectric device comprising the steps of:
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(a) preparing a substrate, (b) depositing a first metal conductor layer on the substrate, (c) screen printing an active ferroelectric layer on the first metal conductor layer, the active ferroelectric layer having a thickness in the range 5-20 microns, and having a plurality of holes through the active ferroelectric layer exposing the first metal conductor layor, and (d) selectively depositing a second metal conductor layer on the active ferroelectric layer, said second metal conductor layer having a first portion contacting the first metal conductor layer through the said holes, and a second portion on the surface of the active ferroelectric layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. Method for the manufacture of a ferroelectric device comprising the steps of:
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(a) preparing a BaxSryTiO3 ceramic substrate by steps comprising;
(i) forming multilayer interconnections on the surface of a first BaxSryTiO3 ceramic tape, (ii) applying a second BaxSryTiO3 ceramic tape over the surface of the first ceramic tape, (iii) forming a first metal conductor layer on the second BaxSryTiO3 ceramic tape, (iv) co-firing the BaxSryTiO3 ceramic tapes to form the substrate, (b) screen printing a BaxSryTiO3 active ferroelectric layer on the substrate, the BaxSryTiO3 active ferroelectric layer having a thickness in the range 5-20 microns, and having a plurality of holes through the BaxSryTiO3 active ferroelectric layer exposing the first metal conductor layer, (c) filling the holes with conductor, (d) firing the BaxSryTiO3 active ferroelectric layer and conductor, and (e) selectively depositing a second metal conductor layer on the BaxSryTiO3 active ferroelectric layer.
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Specification