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Microstrip phase shifters

  • US 6,350,335 B1
  • Filed: 10/23/2000
  • Issued: 02/26/2002
  • Est. Priority Date: 02/16/1999
  • Status: Expired due to Term
First Claim
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1. Method for the manufacture of a ferroelectric device comprising the steps of:

  • (a) preparing a substrate, (b) depositing a first metal conductor layer on the substrate, (c) screen printing an active ferroelectric layer on the first metal conductor layer, the active ferroelectric layer having a thickness in the range 5-20 microns, and having a plurality of holes through the active ferroelectric layer exposing the first metal conductor layor, and (d) selectively depositing a second metal conductor layer on the active ferroelectric layer, said second metal conductor layer having a first portion contacting the first metal conductor layer through the said holes, and a second portion on the surface of the active ferroelectric layer.

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