Light emitting diode device

• US 6,350,996 B1
• Filed: 04/23/1999
• Issued: 02/26/2002
• Est. Priority Date: 04/24/1998
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Ueno, Kazunori, Kawai, Tatsundo
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/296,756
• Time in Patent Office: 1,040 Days
• Field of Search: 257/88, 257/79, 257/80, 257/81, 257/84, 257/93, 257/103, 257/40
• US Class Current: 257/88
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 2300/088 using a non-linear two-terminal element
• CPC Class Codes: G09G 2300/0885 Pixel comprising a non-linear two-terminal element alone in series with each display pixel element
• CPC Class Codes: G09G 2310/0256 with the purpose of reversing the voltage across a light emitting or modulating element within a pixel
• CPC Class Codes: G09G 2320/043 Preventing or counteracting the effects of ageing
• CPC Class Codes: G09G 3/3216 using a passive matrix
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: G09G 3/325 the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]

Abstract

A light emitting diode device includes a light emitting diode and a non-linear element which are arranged on a substrate. The non-linear element is composed of an organic compound layer.

Claims

1. A light emitting diode device comprising:

a light emitting diode and a non-linear element, which are arranged on a substrate,

wherein electric current or electric charge flowing through said light emitting diode corresponds to a signal charge applied through the non-linear element, and

wherein the non-linear element has diode or bi-directional diode characteristics and comprises an organic compound layer.

2. A light emitting diode device according to claim 1, wherein the light emitting diode comprises a light emitting layer held between an anode and a cathode.

3. A light emitting diode device according to claim 2, wherein the light emitting layer comprises an organic compound.

4. A light emitting diode device according to claim 3, wherein the organic compound layers which respectively constitute the non-linear element and the light emitting diode have at least one common material.

5. A light emitting diode device according to claim 4, wherein the organic compound layers which respectively constitute the non-linear element and the light emitting diode are made of the same material.

6. A light emitting diode device according to claim 3, wherein the organic compound layers which respectively constitute the non-linear element and the light emitting diode are made of different materials.

7. A light emitting diode device according to claim 1, wherein the non-linear element controls a resistance of an element for a current flowing in the thickness direction of the organic compound layer to control charge storage in or discharge from a pixel according to the data signal.

8. A light emitting diode device according to claim 1, wherein the non-linear element has a light shielding layer.

9. A light emitting diode device according to claim 1, wherein the non-linear element has a low emission efficiency or emits substantially no light, as compared with the light emitting diode.

10. A method of manufacturing a light emitting diode device according to claim 1,

wherein each of the light emitting diode and the non-linear element comprises an organic compound layer.

11. A method of manufacturing a light emitting diode device according to claim 10, wherein the organic compound layers which respectively constitute the non-linear element and the light emitting diode are made of different materials.

12. A method of manufacturing a light emitting diode device according to claim 10, wherein the organic compound layers which respectively constitute the non-linear element and the light emitting diode are made of the same material.

13. A method of manufacturing a light emitting diode device according to claim 10, wherein the non-linear element has diode characteristics.

14. A method of manufacturing a light emitting diode device according to claim 10, wherein the non-linear element has bidirectional diode characteristics.

15. A method of manufacturing a light emitting diode device according to claim 10, wherein the non-linear element comprises a transistor.

16. A method of manufacturing a light emitting diode device according to claim 15, wherein two transistors are arranged for one pixel.

17. A method of manufacturing a light emitting diode device according to claim 16, wherein one of the transistors is connected in series to the light emitting diode, and the other transistor is connected in series to the gate of the one transistor.

18. A light emitting diode device according to claim 1, wherein the non-linear element is connected in series to the light emitting diode.

19. A light emitting diode device according to claim 1, wherein a transistor is connected to the light emitting diode.

20. A light emitting diode device according to claim 19, wherein a drain or source terminal is connected to the light emitting diode.

21. A light emitting diode device according to claim 20, wherein the non-linear element is connected to a gate of the transistor.