MOS-gated device having a buried gate and process for forming same

• US 6,351,009 B1
• Filed: 03/01/1999
• Issued: 02/26/2002
• Est. Priority Date: 03/01/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Zeng, Jun, Kocon, Christopher B.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Ortiz, Edgardo
• Application Number:
  US09/260,411
• Time in Patent Office: 1,093 Days
• Field of Search: 257/328, 257/330, 257/333, 257/352
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

An improved trench MOS-gated device comprises a monocrystalline semiconductor substrate on which is disposed a doped upper layer. The upper layer includes at an upper surface a plurality of heavily doped body regions having a first polarity and overlying a drain region. The upper layer further includes at its upper surface a plurality of heavily doped source regions having a second polarity opposite that of the body regions A gate trench extends from the upper surface of the upper layer to the drain region and separates one source region from another. The trench has a floor and sidewalls comprising a layer of dielectric material and contains a conductive gate material filled to a selected level and an isolation layer of dielectric material that overlies the gate material and substantially fills the trench. The upper surface of the overlying layer of dielectric material in the trench is thus substantially coplanar with the upper surface of the upper layer. A process for forming an improved MOS-gate device provides a device whose gate trench is filled to a selected level with a conductive gate material, over which is formed an isolation dielectric layer whose upper surface is substantially coplanar with the upper surface of the upper layer of the device.

Claims

1. An improved trench MOS-gated device comprising:

a substrate comprising doped monocrystalline silicon semiconductor material;

a doped upper layer disposed on said substrate, said upper layer having an upper surface and comprising at said upper surface a plurality of heavily doped body regions having a first polarity, said body regions overlying a drain region in said upper layer, said upper layer further comprising at said upper surface a plurality of heavily doped source regions having a second polarity and extending from said upper surface to a selected depth in said upper layer; and

a gate trench separating one of said source regions from a second source region, said trench extending from said upper surface of said upper layer to said drain region, said trench having a floor and sidewalls comprising a layer of dielectric material, said trench being partially filled with a conductive gate material to a selected level substantially below the upper surface of the upper layer and the remainder of said partially filled trench being filled with an isolation layer of dielectric material overlying and directly located on said gate material, said overlying layer of dielectric material in said trench having an upper surface that is substantially coplanar with said upper surface of said upper layer.

2. The device of claim 1 wherein the selected level of gate material in the trench is substantially coplanar with the selected depth of the source regions in the upper layer.

3. The device of claim 1 wherein said dielectric material forming said sidewalls, said floor, and said isolation layer in said gate trench comprises silicon dioxide.

4. The device of claim 1 wherein said conductive gate material within said gate trench is selected from the group consisting of a metal, a silicide, and doped polysilicon.

5. The device of claim 1 wherein said first polarization is P and said second polarization is N.

6. The device of claim 1 wherein said first polarization is N and said second polarization is P.

7. The device of claim 1 comprising a plurality of gate trenches having an open-cell stripe topology.

8. The device of claim 1 comprising a plurality of gate trenches having a closed-cell cellular topology.

9. The device of claim 8 wherein cells in said closed-cell cellular topology have a square configuration or a hexagonal configuration.

10. The device of claim 1 wherein said upper layer comprises an epitaxial layer.

11. The device of claim 1 wherein said upper layer further comprises a well region having said first polarity, said well region underlying said body and source regions and overlying said drain region.

12. The device of claim 1 wherein one of said source regions is disposed between and adjacent to one of said source regions and a gate trench.

13. The device of claim 1 wherein one of said source regions is disposed between and adjacent to two gate trenches.

14. The device of claim 1 wherein said plurality of body regions and said plurality of source regions comprise a plurality of arrays of alternating body regions and source regions each disposed adjacent to a gate trench, and wherein one of said arrays is separated from a second of said arrays by said gate trench.

15. The device of claim 14 wherein each said array of alternating body regions and source regions have a lengthwise dimension along said gate trench, said source regions comprising a greater portion and said body regions comprising a lesser portion of said lengthwise dimension.

16. The device of claim 1 wherein said device is a power MOSFET.

17. The device of claim 1 wherein said device is an insulated gate bipolar transistor.

18. The device of claim 1 wherein said device is an MOS-controlled thyristor.