Plasma assisted processing chamber with separate control of species density

• US 6,352,049 B1
• Filed: 07/20/1998
• Issued: 03/05/2002
• Est. Priority Date: 02/09/1998
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Sato, Arthur, Chen, Arthur, Lee, Chii, Yamartino, John, Qian, Xueyan, Shan, Hong Ching, Kolandenko, Arnold, Ye, Yan, Loewenhardt, Peter, Yin, Gerald, Xu, Songlin, Grimbergen, Michael, Yan, Chun, Zawalski, Wade, Ma, Diana
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US09/119,417
• Time in Patent Office: 1,324 Days
• Field of Search: 118/723.MP, 118/723.ME, 118/723.MR, 118/723.MA, 118/723.AN, 118/723.ER, 118/723.IR, 156/345, 204/298.37, 204/298.16
• US Class Current: 118/723.0MP
• CPC Class Codes: H01J 37/32871 Means for trapping or directing unwanted particles

Abstract

The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Claims

1. A plasma reactor comprising:

a) a processing chamber comprising therewith a source power applicator capable of sustaining a processing plasma within the processing chamber, the processing chamber being adapted to hold a workpiece exposed to the processing plasma, the processing chamber further comprising a separate bias power applicator capable of providing bias power to the workpiece;

b) a collateral chamber coupled to the processing chamber and comprising therewith a helicon source power applicator capable of generating a collateral plasma using a helicon wave; and

c) a filter disposed between the collateral chamber and the processing chamber.

2. The plasma reactor of claim 1, wherein the processing plasma is comprised of species of neutral and charged particles having densities, and wherein the collateral chamber source power applicator and the filter are configured so that substantially only charged particles are provided to the primary processing plasma from the collateral source chamber.

3. The plasma reactor of claim 1, wherein the processing plasma is comprised of species of neutral and charged particles having densities, and wherein the collateral chamber source power applicator and the filter are configured so that substantially only charged particles having a selected charge-to-mass ratio are provided to the primary processing plasma from the collateral source chamber.

4. The plasma reactor of claim 1, wherein the processing plasma is comprised of species of neutral and charged particles having densities, and wherein the collateral chamber source power applicator and the filter are configured so that substantially only neutral particles are provided to the primary processing plasma from the collateral source chamber.

5. The plasma reactor of claim 1, wherein the processing plasma is comprised of species of neutral and charged particles having densities, and wherein the collateral chamber source power applicator and the filter are configured so that substantially only neutral particles having a selected mass are provided to the primary processing plasma from the collateral source chamber.

6. The plasma reactor of claim 5 wherein the filter comprises a quadrupole and at least one of a neutralizing grid or a conduit.

7. The plasma reactor of claim 1 wherein the processing chamber comprises an inductive antenna.

8. The plasma reactor of claim 7 wherein the processing chamber further comprises a ceiling, and wherein the collateral chamber is coupled to the processing chamber ceiling.

9. The plasma reactor of claim 1 further comprising a plurality of process gas sources, and wherein all of the process gas sources are coupled to the collateral chamber.

10. The plasma reactor of claim 1 further comprising a plurality of process gas sources, and wherein at least one of the process gas sources is coupled to the collateral chamber, and wherein at least one of the process gas sources is coupled to the processing chamber.

11. The plasma reactor of claim 10 wherein the plurality of process gas sources are adapted to simultaneously supply process gas to the processing chamber and the collateral chamber.

12. The plasma reactor of claim 10 wherein the plurality of process gas sources supply process gases for processing a workpiece.

13. The plasma reactor of claim 1 wherein

the processing chamber source power applicator and the collateral chamber source power applicator are adapted to be simultaneously powered.

14. The plasma reactor of claim 1 further comprising

a processing plasma formed within the processing chamber by the application of source power to both the processing chamber source power applicator and the collateral chamber source power applicator.

15. The plasma reactor of claim 14 wherein the processing plasma is formed from at least one process gas introduced into the collateral chamber and at least one process gas introduced into the primary chamber.

16. The plasma reactor of claim 1, wherein the processing chamber source power applicator comprises an inductive coil antenna.

17. The plasma reactor of claim 1 wherein the filter is adapted to admit substantially only neutral particles from the collateral chamber to the processing chamber.

18. The plasma reactor of claim 1 wherein the filter is adapted to admit neutral particles based on mass from the collateral chamber to the processing chamber.

19. The plasma reactor of claim 18 wherein the filter comprises a quadrupole and at least one of a neutralizing grid or a conduit.

20. The plasma reactor of claim 1 wherein the filter is adapted to admit charged particles from the collateral chamber to the processing chamber.

21. The plasma reactor of claim 1 wherein the filter is adapted to admit charged particles based on charge-to-mass ratio from the collateral chamber to the processing chamber.

22. The plasma reactor of claim 1 wherein the filter comprises at least one of:

a conduit, a neutralizing grid, a biased grid, a magnet, or a quadrupole.

23. The plasma reactor of claim 1 wherein the collateral chamber comprises at least one of:

a microwave discharge apparatus, an inductive discharge apparatus, or a capacitive discharge apparatus.

24. The plasma reactor of claim 23 wherein the processing chamber source power applicator comprises an inductive coil antenna.