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High breakdown voltage semiconductor device having trenched film connected to electrodes

  • US 6,353,252 B1
  • Filed: 07/28/2000
  • Issued: 03/05/2002
  • Est. Priority Date: 07/29/1999
  • Status: Expired due to Fees
First Claim
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1. A high breakdown voltage semiconductor device formed on a high resistance semiconductor layer, comprising:

  • a plurality of trenches formed like a stripe in a drift region in substantially parallel with a current flowing direction;

    an insulation film formed on a side and a bottom of each of the trenches; and

    a high resistance film buried into each of the trenches with the insulation film interposed therebetween, wherein the high resistance film is connected to one of source and gate electrodes directly or through a resistor near a source-end portion of each of the trenches, and the high resistance film is connected to a drain electrode directly or through a resistor near a drain-end portion of each of the trenches.

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