Wide temperature range RTD

• US 6,354,736 B1
• Filed: 03/24/1999
• Issued: 03/12/2002
• Est. Priority Date: 03/24/1999
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell International Inc.
• Inventors: Weeres, Steven R., Holmen, James O., Cole, Barrett E.
• Primary Examiner(s): Gutierrez, Diego
• Assistant Examiner(s): VERBITSKY, GAIL KAPLAN
• Application Number:
  US09/275,288
• Time in Patent Office: 1,084 Days
• Field of Search: 374/185, 374/183, 338/322.R
• US Class Current: 374/185
• CPC Class Codes: G01K 7/183 characterised by the use of the resistive element
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01C 7/22 Elongated resistive element being bent or curved, e.g. sinusoidal, helical

Abstract

An RTD having a thin film HfN resistor formed on a substrate for temperature detection in accordance with the resistance of the HfN resistor. The RTD is a two lead device having high accuracy and a wide temperature range from 20 to 1400 degrees Kelvin. The substrate has bonding pads or contact strips connected to the resistor and processing electronics. An SiN thin film passivation layer is formed on the resistor and substrate. Two leads connect the bonding pads or contact strips to processing electronics and an indicator.

Claims

1. A high temperature resistance temperature device comprising:

a substrate;

a resistor made substantially of hafnium nitride (HfN) and formed on said substrate, said resistor having a measurable resistance over a temperature range of from about 30 to about 1400 degrees Kelvin;

first and second leads forming the sole means of passing current through said resistor;

said first and second leads being adapted for connection to processing electronics for determining the temperature of said resistor as a function of the resistance thereof.

2. The resistance temperature device of claim 1, further comprising:

a first bonding pad, connected to a first end of said HfN resistor, situated on said substrate; and

a second bonding pad, connected to a second end of said HfN resistor, situated on said substrate.

3. The resistance temperature device of claim 2, further comprising a passivation layer formed on said HfN resistor.

4. The resistance temperature device of claim 3, further comprising:

a first lead connected to said first bonding pad; and

a second lead connected to said second bonding pad.

5. The resistance temperature device of claim 4, wherein said substrate is fabricated from a material selected form a group consisting of alumina, glass, silicon and ceramic.

6. The resistance temperature device of claim 5, further comprising:

processing electronics connected to said first and second leads; and

an indicator connected to said processing electronics.

7. The resistance temperature device of claim 6, wherein said indicator is a temperature indicator.

8. The resistance temperature device of claim 7, wherein temperature of said HfN resistor versus resistance fits a fifth order polynomial.

9. The resistance temperature device of claim 7, wherein temperature of said HfN resistor versus resistance fits a third order polynomial.

10. The resistance temperature device of claim 5, wherein said HfN resistor is a trimmable precision resistor.

11. The resistance temperature device of claim 10, wherein said HfN resistor has a serpentine configuration.

12. A high temperature resistance temperature device comprising:

a die;

a strip made substantially of hafnium nitride (HfN) and formed on said die, said strip having a measurable resistance over a temperature range of from about 30 to about 1400 degrees Kelvin;

a first bonding pad connected to a first end of said HfN strip;

a second bonding pad connected to a second end of said HfN strip;

first and second leads connected to said first and second bonding pads respectively, said leads forming the sole means of passing current through said strip;

said first and second leads being adapted for connection to processing electronics for determining the temperature of said resistor as a function of the resistance thereof.

13. The resistance temperature device of claim 12, further comprising a passivation-layer formed on said HfN strip.

14. The resistance temperature device of claim 13, wherein:

said HfN strip is a thin film; and

said passivation layer is a thin film.

15. The resistance temperature device of claim 14, further comprising:

a substrate upon which said die is situated;

a first contact strip formed on said substrate;

a second contact strip formed on said substrate;

a first wire connected to said first lead and to said first contact strip; and

a second wire connected to said second lead and to said second contact strip.

16. The resistance temperature device of claim 15, wherein said HfN strip is a trimmable precision resistor.

17. The resistance temperature device of claim 15, further comprising an HfN resistor connected in series with said HfN strip, wherein said HfN resistor is trimmable ladder resistor.

18. The resistance temperature device of claim 15, wherein said HfN strip has a serpentine configuration.

19. The resistance temperature device of claim 18, further comprising:

a first lead connected to said first contact strip; and

a second lead connected to said second contact strip.

20. A high temperature resistance temperature device comprising:

a substrate;

a thin film resistor made substantially of hafnium nitride (HfN) and formed on said substrate, said resistor having a measurable resistance over a temperature range of from about 30 to about 1400 degrees Kelvin;

a first thin film contact strip connected to said thin film HfN resistor at a first location;

a second thin film contact strip connected to said thin film HfN resistor at a second location; and

first and second leads connected to said first and second thin film contact strips respectively, said leads forming the sole means of passing current through said resistor;

said first and second leads being adapted for connection to processing electronics for determining the temperature of said resistor as a function of the resistance thereof.

21. The resistance temperature device of claim 20, further comprising a thin film passivation layer formed on said then film HfN resistor.

22. The resistance temperature device of claim 21, further comprising processing electronics connected to said first and second thin film contact strips.