ALD method to improve surface coverage
First Claim
1. A method of depositing a film on a substrate of a semiconductor device, comprising:
- a) exposing said substrate to at least one adherent material in a quantity sufficient for said material to adsorb onto said substrate to thereby form an initiation layer, said initiation layer presenting at least one first reactive moiety;
b) chemically reacting said first reactive moiety with at least one first reaction material to form a second reactive moiety; and
c) chemically reacting said second reactive moiety with at least one second reaction material, wherein said steps a) through c) are performed under atomic layer deposition conditions sufficient to form at least one reaction layer over said initiation layer, whereby said initiation layer material is not substantially degraded during said steps b) and c).
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Abstract
A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.
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Citations
33 Claims
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1. A method of depositing a film on a substrate of a semiconductor device, comprising:
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a) exposing said substrate to at least one adherent material in a quantity sufficient for said material to adsorb onto said substrate to thereby form an initiation layer, said initiation layer presenting at least one first reactive moiety;
b) chemically reacting said first reactive moiety with at least one first reaction material to form a second reactive moiety; and
c) chemically reacting said second reactive moiety with at least one second reaction material, wherein said steps a) through c) are performed under atomic layer deposition conditions sufficient to form at least one reaction layer over said initiation layer, whereby said initiation layer material is not substantially degraded during said steps b) and c). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of depositing a film on a substrate in a semiconductor device, comprising:
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a) exposing said substrate to tetrakisdimethylamino titanium in a quantity sufficient for said compound to adsorb onto said substrate in a manner such that said adsorbed material forms an initiation layer over said substrate and further presents at least one reactive dimethylamino ligand;
b) reacting said at least one dimethylamino ligand with at least one first reaction material selected from the group consisting of nitrogen-bearing compounds to thereby form a second reactive moiety; and
c) reacting said second reactive moiety with a tungsten-bearing compound, wherein said steps a) through c) are performed using an atomic layer deposition process at a temperature of about 250°
C. to about 350°
C. so as to form a reaction layer of tungsten nitride (WNx) over said initiation layer, whereby said initiation layer is not substantially degraded by said atomic layer deposition process.- View Dependent Claims (30, 31, 32)
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33. A method of depositing a film on a substrate of a semiconductor device, comprising:
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a) exposing said substrate to at least one chemisorbent material in a quantity sufficient for said material to stick onto said substrate to thereby form an initiation layer, said initiation layer presenting at least one first reactive moiety;
b) chemically reacting said first reactive moiety with at least one first reaction material to form a second reactive moiety; and
c) chemically reacting said second reactive moiety with at least one second reaction material, wherein said steps a) through c) are performed under atomic layer deposition conditions sufficient to form at least one reaction layer over said initiation layer, whereby said initiation layer material is not substantially degraded during said steps b) and c).
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Specification