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ALD method to improve surface coverage

  • US 6,355,561 B1
  • Filed: 11/21/2000
  • Issued: 03/12/2002
  • Est. Priority Date: 11/21/2000
  • Status: Expired due to Fees
First Claim
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1. A method of depositing a film on a substrate of a semiconductor device, comprising:

  • a) exposing said substrate to at least one adherent material in a quantity sufficient for said material to adsorb onto said substrate to thereby form an initiation layer, said initiation layer presenting at least one first reactive moiety;

    b) chemically reacting said first reactive moiety with at least one first reaction material to form a second reactive moiety; and

    c) chemically reacting said second reactive moiety with at least one second reaction material, wherein said steps a) through c) are performed under atomic layer deposition conditions sufficient to form at least one reaction layer over said initiation layer, whereby said initiation layer material is not substantially degraded during said steps b) and c).

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