Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses
First Claim
1. A semiconductor manufacturing method comprising the steps of:
- providing a semiconductor substrate in a processing chamber;
generating a plasma in the processing chamber;
manufacturing a semiconductor substrate by carrying out processing on the semiconductor substrate by the generated plasma in the processing chamber;
detecting a foreign particle floating within one of the generated plasma and an area in proximity thereto in the processing chamber including the steps of radiating an intensity-modulated light, into the processing chamber through a radiation window provided on a wall of the processing chamber;
optically separating a component of the light with a wavelength which is the same as that of the intensity-modulated light from a light from the processing chamber which is obtained through an observation window provided on the wall of the processing chamber and optically receiving the separated component of light by a detector and converting the received separated component of light into a first signal;
obtaining information of the floating foreign particle by extracting from the first signal a signal component having a frequency which is the same as that of the intensity-modulated light; and
taking the manufactured semiconductor substrate outside from the processing chamber.
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Accused Products
Abstract
The present invention provides a semiconductor manufacturing method, a plasma processing method and a plasma processing apparatus for generating a plasma in a processing chamber and carrying out processing on material to be processed by using the plasma, comprising a floating-foreign-particle measuring apparatus including: a light radiating optical system for radiating a light having a desired wavelength and completing intensity modulation at a desired frequency to the processing chamber; a scattered-light detecting optical system for separating a component with the desired wavelength from scattered lights obtained from the processing chamber as a result of radiation of the light by the light radiating optical system, for optically receiving the component and for converting the component into a first signal; and a foreign-particle-signal extracting unit which separates a second signal representing foreign particle floating in the plasma or in an area in proximity to the plasma from a third signal obtained by emission of the plasma for detection of the second signal by extraction of a component with the desired frequency used for the intensity modulation from the first signal obtained from the scattered-light detecting optical system.
30 Citations
14 Claims
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1. A semiconductor manufacturing method comprising the steps of:
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providing a semiconductor substrate in a processing chamber;
generating a plasma in the processing chamber;
manufacturing a semiconductor substrate by carrying out processing on the semiconductor substrate by the generated plasma in the processing chamber;
detecting a foreign particle floating within one of the generated plasma and an area in proximity thereto in the processing chamber including the steps of radiating an intensity-modulated light, into the processing chamber through a radiation window provided on a wall of the processing chamber;
optically separating a component of the light with a wavelength which is the same as that of the intensity-modulated light from a light from the processing chamber which is obtained through an observation window provided on the wall of the processing chamber and optically receiving the separated component of light by a detector and converting the received separated component of light into a first signal;
obtaining information of the floating foreign particle by extracting from the first signal a signal component having a frequency which is the same as that of the intensity-modulated light; and
taking the manufactured semiconductor substrate outside from the processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A plasma processing method comprising the steps of:
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providing a semiconductor substrate in a processing chamber;
generating a plasma in the processing chamber;
carrying out processing on the semiconductor substrate by the generated plasma in the processing chamber;
detecting a foreign particle floating within one of the generated plasma and an area in proximity thereto in the processing chamber including the steps of radiating an intensity-modulated light, into the processing chamber through a radiation window provided on a wall of the processing chamber;
optically separating a component of the light with wavelength which is the same with that of the intensity-modulated light from a light from the processing chamber which is obtained through an observation window provided on the wall of the processing chamber and optically receiving the separated component of light by a detector and converting the received separated component of light into a first signal;
obtaining information of the floating foreign particle by extracting from the first signal a signal component having a frequency which is the same as that of the intensity-modulated light; and
taking the semiconductor substrate outside from the processing chamber. - View Dependent Claims (11, 12, 13, 14)
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Specification