High-frequency module coupled via aperture in a ground plane

• US 6,356,173 B1
• Filed: 05/28/1999
• Issued: 03/12/2002
• Est. Priority Date: 05/29/1998
• Status: Expired due to Fees

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Nakayama, Akira, Nagata, Koichi, Kubo, Takanori, Ishida, Masanobu, Morioka, Shigeki, Koriyama, Shinichi, Kitazawa, Kenji, Shino, Naoyuki, Minamiue, Hidehiro
• Primary Examiner(s): LEE, BENNY T
• Application Number:
  US09/322,739
• Time in Patent Office: 1,019 Days
• Field of Search: 333/24.R, 333/246, 333/247, 333/260, 327/565, 257/664, 257/725, 257/728
• US Class Current: 333/247
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16153 Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
• CPC Class Codes: H01L 2924/16251 Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
• CPC Class Codes: H01L 2924/1903 including wave guides
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 1/0239 Signal transmission by AC coupling
• CPC Class Codes: H05K 1/0243 Printed circuits associated with mounted high frequency components
• CPC Class Codes: H05K 1/0272 Adaptations for fluid transport, e.g. channels, holes
• CPC Class Codes: H05K 1/0298 Multilayer circuits
• CPC Class Codes: H05K 2201/09054 Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 3/0061 onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20

Abstract

A high-frequency module in which a plurality of cavities are formed on the surface of a dielectric board, internal high-frequency signal transmission lines are connected to high-frequency devices in the cavities and are located in the cavities, the internal high-frequency signal transmission lines being electromagnetically coupled to the external high-frequency signal transmission line, and the high-frequency devices in the cavities are connected to each other relying on the electromagnetic coupling through the external line. The high-frequency module enables high-frequency signals to be transmitted among the high-frequency devices with a small loss. The module has a very simple structure, and is cheaply produced, and offers an advantage that it can be easily obtained in a small size.

Claims

1. A high-frequency module comprising:

a dielectric board;

first and second cavities closed by closures joined to an upper surface of said dielectric board, the cavities being independent from each other;

first and second high-frequency devices mounted on the upper surface of said dielectric board at positions in said first and second cavities, respectively;

first and second high-frequency signal transmission lines arranged on the upper surface of said dielectric board at positions in said first and second cavities, respectively, and having first ends electrically connected to respective high-frequency devices;

a third high-frequency signal transmission line disposed on a lower surface of said dielectric board; and

an electrically conductive member mounted on the lower surface of said dielectric board and electromagnetically shielding said third high-frequency signal transmission line;

wherein a second end of said first high-frequency signal transmission line and a second end of said second high-frequency signal transmission line are electromagnetically coupled to said third high-frequency signal transmission line, whereby said first and second high-frequency devices are coupled to transmit high-frequency signals therebetween.

2. A high-frequency module according to claim 1, wherein

the first, second, and third high-frequency signal transmission lines are formed of a structure selected from the group consisting of microstrip lines, coplanar lines, grounded coplanar lines and triplate lines.

3. A high-frequency module according to claim 1, further comprising:

a fourth high-frequency signal transmission line disposed on the upper surface of said dielectric board outside said first and second cavities and adapted to be connected to an external circuit, said fourth high-frequency signal transmission line being electromagnetically coupled to said third high-frequency signal transmission line for transmitting a high-frequency signal between said first or second high-frequency devices and said external circuit.

4. A high-frequency module according to claim 1, further comprising a ground layer having slots provided in the dielectric board, wherein the second end of the first high-frequency signal transmission line and the second end of the second high-frequency signal transmission line are electromagnetically coupled to the third high-frequency signal transmission line via the slots of the ground layer.

5. A high-frequency module according to claim 4, wherein the dielectric board is formed of at least two laminated dielectric layers, and the ground layer is disposed on an interface of two of the dielectric layers.

6. A high-frequency module according to claim 5, wherein an interfacial electric conductivity of a surface between a dielectric layer and the first, second, or third high-frequency signal transmission line or the ground layer is not smaller than 3.5×

10⁷ ω

<sup>−

1</sup>·

m<sup>−

1</sup> at 12 GHz.

7. A high-frequency module according to claim 5, wherein a dielectric constant δ

1 of a dielectric layer between the first or second high-frequency signal transmission line and the ground layer is larger than a dielectric constant δ

2 of a dielectric layer between the third high-frequency signal transmission line and the ground layer.

8. A high-frequency module according to claim 5, wherein an interfacial electric conductivity of a surface between a dielectric layer and the first, second, or third high-frequency signal transmission line or the ground layer is not smaller than 0.4×

10¹⁷ Ω

<sup>−

1</sup>·

at 13 GHz.

9. A high-frequency module according to claim 5, wherein an interfacial electric conductivity of a surface between a dielectric layer and the first, second, or third high-frequency signal transmission line or the ground layer is not smaller than 3×

10⁷ Ω

<sup>−

1</sup>·

m<sup>−

1</sup> at 13 GHz.