Article comprising an optical cavity

• US 6,356,689 B1
• Filed: 03/25/2000
• Issued: 03/12/2002
• Est. Priority Date: 03/25/2000
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Greywall, Dennis Stanley
• Primary Examiner(s): Palmer, Phan T. H.
• Application Number:
  US09/536,344
• Time in Patent Office: 717 Days
• Field of Search: 385/52, 385/147, 385/129-132, 359/291, 359/245, 359/290, 438/455, 438/458, 372/45, 372/50
• US Class Current: 385/52
• CPC Class Codes: G01J 3/26 using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/02 for controlling the intensity of light G02B26/004 takes precedence

Abstract

An article comprising an optical cavity includes two mirrors, at least one of which is advantageously movable, that are spaced from and parallel to one another. In some embodiments, both mirrors are formed from unstressed single crystal silicon. The single crystal silicon used in some embodiments is advantageously sourced from single crystal silicon-on-insulator (“SOI”) wafers. In a method in accordance with the present invention, a first mirror is patterned in the thin silicon layer of a first SOI wafer. A standoff is disposed on the thin silicon layer near the first mirror. The thin silicon layer of a second SOI wafer is attached to the standoff such that there is a gap between the two, spaced, thin silicon layers. The thin silicon layer of the second SOI wafer is released forming a movable mirror by removing the thick layer of silicon and the buried oxide from that wafer.

Claims

1. An article comprising an optical cavity operable to receive an optical signal, said optical cavity comprising:

a first movable mirror comprising single crystal silicon; and

a second mirror comprising single crystal silicon that is spaced from said first movable mirror and is in parallel relation thereto.

2. The article of claim 1 wherein said first movable mirror has a thickness that is an odd multiple of one-quarter of a wavelength of said optical signal, as measured in said first movable mirror.

3. The article of claim 2 wherein said second mirror has a thickness that is an odd multiple of one-quarter of a wavelength of said optical signal, as measured in said non-moving layer.

4. The article of claim 1 wherein said first movable mirror comprises a portion of a first single crystal silicon-on-insulator wafer.

5. The article of claim 4 wherein said second mirror comprises a portion of a second single crystal silicon-on-insulator wafer.

6. The article of claim 5 wherein said first single crystal silicon-on-insulator wafer has a guide for receiving and passively aligning a first optical fiber.

7. The article of claim 6 wherein said second single crystal silicon-on-insulator wafer has a guide for receiving and passively aligning a second optical fiber.

8. The article of claim 1 further comprising:

a controlled voltage source that is electrically connected to said first movable mirror and to said second mirror.

9. The article of claim 8 further comprising a first optical fiber in optical communication with said first movable mirror.

10. The article of claim 9 further comprising a second optical fiber in optical communication with said second mirror.

11. The article of claim 8 wherein the article is a spectral equalizer, the spectral equalizer comprising a plurality of optical cavities, each having:

a first movable mirror comprising single crystal silicon; and

a second mirror comprising single crystal silicon that is spaced from said first movable mirror and is in parallel relation thereto.

12. The article of claim 11 wherein all of said second mirrors are defined in a thin layer of single crystal silicon on a first silicon-on-insulator wafer.

13. The article of claim 12 wherein all of said first movable mirrors are defined in a thin layer of single crystal silicon on a second silicon-on-insulator wafer.

14. An article that is formed by:

defining a first mirror in a thin silicon layer of a first silicon-on-insulator (“

SOI”

) wafer;

forming a second movable mirror in a thin silicon layer of a second SOI wafer;

disposing a standoff on one of either said thin silicon layer of said first SOI wafer or said thin silicon layer of said second SOI wafer; and

joining said first and second SOI wafers via said standoff.

15. The article of claim 14, wherein said thin silicon layer of one of said SOI wafers is attached to said standoff.

16. A method for forming an article having an optical cavity, comprising:

defining a first mirror on a thin silicon layer of a first silicon-on-insulator (“

SOI”

) wafer;

attaching a second SOI wafer having a thin silicon layer to said first SOI wafer by;

forming a standoff on at least one of said first or second SOI wafers, and

joining said standoff to said thin silicon layer of at least one of said first or second SOI wafers.

17. The method of claim 16 wherein the step of forming a standoff comprises disposing an electrically insulating material on at least one said first or second SOI wafers to a height equal to a desired height of said optical cavity.

18. The method of claim 17 wherein said step of disposing a standoff comprises disposing a layer of oxide on said thin silicon layer of said first SOI wafer.

19. The method of claim 18 wherein said step of joining comprises wafer bonding said second SOI wafer to said standoff.

20. The method of claim 16 further comprising removing a portion of a buried insulator layer and a portion of a thick silicon layer from said first SOI wafer.

21. The method of claim 20 wherein the step of removing further comprises forming a passive-alignment guide in said first SOI wafer for receiving and passively aligning an optical fiber with said first mirror.

22. The method of claim 21 further comprising receiving said optical fiber.

23. The method of claim 16 comprising releasing said thin silicon layer of said second SOI wafer by removing a portion of a thick silicon layer and a buried insulator layer of said second SOI wafer.

24. The method of claim 23 wherein removing further comprises forming a passive-alignment guide in said second SOI wafer for receiving and passively aligning a first optical fiber with the released thin silicon layer.

25. The method of claim 24 further comprising receiving said first optical fiber.

26. The method of claim 24 further comprising forming a passive-alignment guide in said first SOI wafer for receiving and passively aligning a second optical fiber with said first mirror.

27. The method of claim 26 further comprising receiving said first and second optical fibers.