Process for producing planar waveguide structures as well as waveguide structure

• US 6,356,694 B1
• Filed: 07/14/1999
• Issued: 03/12/2002
• Est. Priority Date: 07/15/1998
• Status: Expired due to Fees

• Current Assignee: Avanex Corporation (Lumentum Holdings Inc.)
• Original Assignee: Alcatel SA (Nokia Corporation)
• Inventors: Weber, Dieter
• Primary Examiner(s): Sanghavi, Hemang
• Assistant Examiner(s): ROJAS, OMAR R
• Application Number:
  US09/353,285
• Time in Patent Office: 972 Days
• Field of Search: 385/128, 385/129, 385/130, 385/131, 385/132, 653/86, 653/97, 653/88, 653/91, 654/00, 654/29
• US Class Current: 385/132
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/136 by etching

Abstract

A process for producing a waveguide, wherein a first layer is deposited on a silicon or glass substrate, a core structure is subsequently structured, and the core structure is protected by a protective layer. Prior to each step for depositing a new layer, the layer that has just been applied is fluorinated.

Claims

1. A process for producing planar waveguide structures, comprising the steps of:

depositing a first lower layer (2) on a silicon or glass substrate (1);

etching the first lower layer (2) to provide a first fluoride layer;

depositing a core structure (3) on the first fluoride layer of the first lower layer (2);

etching the core structure (3) to provide a second fluoride layer; and

depositing a cover layer (5) to protect the core structure (3),

wherein the etching steps are effected by applying a fluoride-containing liquid.

2. The process according to claim 1, wherein the first lower and the cover layers are produced by a process using one of Si, B and Ge halides.

3. The process according to claim 1 or 2, wherein the core structure is structured by a process.

4. The process according to claim 1, wherein the etching steps produce a 150 nm thick fluoride-containing layer that surrounds the core structure.