Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process

• US 6,358,362 B1
• Filed: 02/29/2000
• Issued: 03/19/2002
• Est. Priority Date: 09/05/1997
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: En, William G., Holbrook, Allison, Wang, Fei
• Primary Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US09/515,321
• Time in Patent Office: 749 Days
• Field of Search: 156/345, 204/192.33, 356/425, 356/437
• US Class Current: 156/345.13
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

Claims

1. An arrangement for determining endpoints in an etching process within a plasma etching chamber, the arrangement comprising:

a sensor configured to measure a first intensity of optical emissions having a first wavelength, and a second intensity of optical emissions having a second wavelength as emitted from within the plasma chamber during a first etching process and a subsequent second etching process of a semiconductor wafer; and

a controller coupled to the sensor and configured to determine an endpoint for the first etching process based on a ratio signal generated from the first intensity and the second intensity, and stop the first etching process at the endpoint for the first etching process, and wherein the controller is further configured to start the second etching process after the endpoint for the first etching process, and the controller is further configured to determine an endpoint for the second etching process based on the ratio signal of the first intensity and the second intensity, and stop the second etching process at the endpoint for the second etching process.

2. The arrangement as recited in claim 1, wherein the first wavelength is selected from a set of wavelengths including approximately 386 nm and approximately 520 nm wavelengths.

3. The arrangement as recited in claim 1, wherein the second wavelength is approximately 439 nm.

4. The arrangement as recited in claim 1, further comprising an interface coupled between the sensor and the controller and configured to sample the optical emissions as received from the sensor, and output, to the controller, a first intensity signal and a second intensity signal, wherein the first intensity signal is an electrical signal that is proportional to the first intensity and the second intensity signal is an electrical signal that is proportional to the second intensity.

5. The arrangement as recited in claim 4, wherein the ratio signal is calculated using the first and second intensity signals.

6. The arrangement as recited in claim 5, wherein the ratio signal is proportional to the first intensity signal divided by the second intensity signal.

7. The arrangement as recited in claim 5, wherein the controller is configured to determine the endpoint for the first etching process by comparing the ratio signal to at least one first etching process threshold level.

8. The arrangement as recited in claim 5, wherein the controller is configured to determine the endpoint for the second etching process by comparing the ratio signal to at least one second etching process threshold level.