Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist

• US 6,358,672 B2
• Filed: 11/16/1998
• Issued: 03/19/2002
• Est. Priority Date: 02/05/1998
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chung, Hoe-sik, Ha, Hun-hwan, Jung, Jin-hang, Choi, Kwang-seok, Kim, Young-sun, Lee, Sung-ho, Lee, Hong, Jeoung, Gyu-chan
• Primary Examiner(s): Baxter, Janet
• Assistant Examiner(s): GILLIAM, BARBARA LEE
• Application Number:
  US09/192,000
• Publication Number:
  US 20010053500A1
• Time in Patent Office: 1,219 Days
• Field of Search: 430/311, 430/328, 430/330
• US Class Current: 430/311
• CPC Class Codes: G03F 7/2024 of the already developed image
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/308 using masks H01L21/3063, H01L21/3065 take precedence

Abstract

There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.

Claims

1. A method of forming a semiconductor device pattern comprising:

a) coating a wafer with a positive photoresist;

b) aligning a photo mask on the positive photoresist, and carrying out an exposure;

c) forming a photoresist pattern on the wafer;

d) carrying out a cross-linking of the photoresist pattern by activating an additive in the positive photoresist, said cross-linking comprising

hard-baking the photoresist pattern, and

carrying out a development for the photoresist pattern passing through the hard-bake; and

e) carrying out a flow bake for the photoresist pattern after the cross-linking, thereby reducing a critical dimension of the photoresist pattern.

2. The method of forming a semiconductor device pattern of the claim 1, wherein the photoresist is for i-line or Deep Ultraviolet (DUV).

3. The method of forming a semiconductor device pattern of the claim 2, wherein the photo mask uses a Phase Shift Mask (PSM) when using the i-line photoresist.

4. The method of forming a semiconductor device pattern of the claim 3, wherein the i-line photoresist is a positive photoresist comprising a base resin, a photo active compound(PAC), solvent, and, as an additive for activating the Cross Linking reaction of the photoresist pattern, 2,4,6-triamino-1,3,5-triazine is added.

5. The method of forming a semiconductor device pattern of the claim 1, wherein the photoresist pattern is a contact hole pattern.

6. The method of forming a semiconductor device pattern of the claim 1, wherein a process temperature of the flow bake ranges from 140 to 200°

C.

7. The method of forming a semiconductor device pattern of the claim 6, wherein a process time for the flow bake ranges from 80 to 120 sec.

8. The method of forming a semiconductor device pattern of the claim 1, wherein the flow bake is carried out at least one time repeatedly.

9. The method of forming a semiconductor device pattern of the claim 1, wherein said carrying out a development for the photoresist pattern passing through the hard-bake is carried out at least two times repeatedly.