Method for manufacturing semiconductor device having a gate electrode film containing nitrogen
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a semiconductor substrate having an element region defined by an isolation region;
forming a nitrogen-containing gate oxide film and a conductive film successively on said element region and subjecting said films to an etching selectively to form a gate electrode;
forming a first dielectric film containing nitrogen to cover entirely said gate electrode and effecting an anisotropic etching to leave said first dielectric film only at a side wall of said gate electrode;
implanting impurity into said semiconductor substrate to form source and drain regions;
forming a second dielectric film containing nitrogen so as to cover at least said gate electrode, said first dielectric film and said source and drain regions;
implanting nitrogen ions into said second dielectric film; and
forming a silicon nitride film so as to cover said second dielectric film and said underlying first dielectric film and said source and drain regions to prevent outward diffusion of nitrogen from said gate electrode during subsequent thermal annealing steps.
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Abstract
There is disclosed a semiconductor device which includes a semiconductor substrate having an element region and source and drain regions, a gate dielectric film containing nitrogen formed in the element region of said semiconductor substrate, a gate electrode formed on the gate dielectric film, a first dielectric film formed adjacent to the gate electrode so as to define a side wall therefor, a second dielectric film formed so as to cover the gate electrode and the first dielectric film, the second dielectric film being doped with nitrogen, and a third dielectric film formed so as to cover the second dielectric film, the third dielectric film being formed of silicon nitride. A method for manufacturing such a semiconductor device is also described.
19 Citations
8 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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preparing a semiconductor substrate having an element region defined by an isolation region;
forming a nitrogen-containing gate oxide film and a conductive film successively on said element region and subjecting said films to an etching selectively to form a gate electrode;
forming a first dielectric film containing nitrogen to cover entirely said gate electrode and effecting an anisotropic etching to leave said first dielectric film only at a side wall of said gate electrode;
implanting impurity into said semiconductor substrate to form source and drain regions;
forming a second dielectric film containing nitrogen so as to cover at least said gate electrode, said first dielectric film and said source and drain regions;
implanting nitrogen ions into said second dielectric film; and
forming a silicon nitride film so as to cover said second dielectric film and said underlying first dielectric film and said source and drain regions to prevent outward diffusion of nitrogen from said gate electrode during subsequent thermal annealing steps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Current AssigneeNEC Electronics Corporation (Renesas Electronics Corporation)
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Original AssigneeNEC Corporation
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InventorsOda, Noriaki
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Primary Examiner(s)Chaudhuri, Olik
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Assistant Examiner(s)Rao, Shrinivas H.
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Application NumberUS09/298,699Time in Patent Office1,061 DaysField of Search438/287, 438/298, 438/669, 438/947, 438/950, 438/301, 438/305, 438/514, 438/517, 438/519, 257/403, 257/411, 257/900, 257/640, 257/760US Class Current438/301CPC Class CodesH01L 21/28176 with a treatment, e.g. anne...H01L 21/76832 Multiple layersH01L 21/76834 formation of thin insulatin...H01L 23/3171 the coating being directly ...H01L 29/4983 with a lateral structure, e...H01L 29/518 the insulating material con...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
