Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
First Claim
1. A method for forming a capacitor on a substrate, comprising:
- a) depositing a bottom layer over a conductor plug in the substrate;
b) depositing a tuning layer over the bottom layer;
c) depositing an interface layer over the tuning layer;
d) re-sputtering the interface layer to conformally cover the tuning layer and the bottom layer;
e) depositing a high k dielectric layer over the interface layer, wherein the high k dielectric layer has a thickness of about 80 angstroms to about 800 angstroms; and
f) depositing an upper electrode layer over the dielectric layer.
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Abstract
The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.
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Citations
37 Claims
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1. A method for forming a capacitor on a substrate, comprising:
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a) depositing a bottom layer over a conductor plug in the substrate;
b) depositing a tuning layer over the bottom layer;
c) depositing an interface layer over the tuning layer;
d) re-sputtering the interface layer to conformally cover the tuning layer and the bottom layer;
e) depositing a high k dielectric layer over the interface layer, wherein the high k dielectric layer has a thickness of about 80 angstroms to about 800 angstroms; and
f) depositing an upper electrode layer over the dielectric layer.
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2. A method for forming a capacitor in a high aspect ratio feature, comprising:
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a) depositing a tuning layer in the feature by physical vapor deposition;
b) distributing and redepositing the tuning layer by high density plasma physical vapor deposition;
c) depositing an interface layer over the tuning layer by physical vapor deposition;
d) distributing and redepositing the interface layer by high density plasma physical vapor deposition;
e) depositing a high k dielectric layer over the interface layer, wherein the high k dielectric layer has a thickness of about 80 angstroms to about 800 angstroms; and
f) depositing an upper electrode layer over the high k dielectric layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
g) depositing a barrier layer in the feature before depositing the tuning layer.
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6. The method of claim 5 wherein the barrier layer comprises titanium, titanium nitride, titanium aluminum nitride, tantalum, tantalum nitride, tantalum aluminum nitride, and combinations thereof.
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7. The method of claim 5 wherein the barrier layer is titanium aluminum nitride.
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8. The method of claim 5 wherein the barrier layer has a thickness of about 50 angstroms to about 500 angstroms.
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9. The method of claim 2 wherein the tuning layer has a thickness of about 50 angstroms to about 1,000 angstroms.
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10. The method of claim 2 wherein the interface layer is a combination material comprising platinum combined with rhodium, platinum combined with iridium, platinum combined with ruthenium, and combinations thereof.
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11. The method of claim 10 wherein the combination material comprises about 75% to about 90% platinum.
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12. The method of claim 2 wherein the interface layer has a thickness of about 200 angstroms to about 4,000 angstroms.
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13. The method of claim 2 wherein the high k dielectric layer comprises barium strontium titanate, lead zirconate titanate, lead lanthanium titanate, barium titanate, strontium titanate, and strontium bismuth titanate.
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14. The method of claim 13 wherein the high k dielectric layer is doped.
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15. The method of claim 2 wherein the high k dielectric layer has a thickness of about 200 angstroms to about 300 angstroms.
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16. The method of claim 2 wherein the high k dielectric layer has a median grain thickness of less than 150 angstroms.
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17. The method of claim 2 wherein the upper electrode layer comprises platinum, ruthenium, iridium, rhodium, platinum combined with rhodium, platinum combined with iridium, platinum combined with ruthenium, and combinations thereof.
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18. A method for forming a capacitor on a substrate, comprising:
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a) depositing a bottom layer over a conductor plug in the substrate;
b) depositing a barrier layer over the bottom layer;
c) depositing a tuning layer over the barrier layer;
d) depositing an interface layer over the tuning layer, wherein the tuning layer controls the microstructure of the interface layer;
e) depositing a high k dielectric layer over the interface layer; and
f) depositing an upper electrode layer over the dielectric layer.
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19. A method for forming a capacitor on a substrate, comprising:
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depositing a bottom layer over a conductor plug in the substrate;
depositing a barrier layer on the bottom layer;
depositing a tuning layer over the barrier layer by physical vapor deposition;
depositing an interface layer over the tuning layer, wherein the tuning layer controls the microstructure of the interface layer;
depositing a high k dielectric layer over the interface layer, wherein the high k dielectric layer has a thickness of about 80 angstroms to about 800 angstroms; and
depositing an upper electrode layer over the dielectric layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification