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Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes

  • US 6,358,810 B1
  • Filed: 07/28/1998
  • Issued: 03/19/2002
  • Est. Priority Date: 07/28/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming a capacitor on a substrate, comprising:

  • a) depositing a bottom layer over a conductor plug in the substrate;

    b) depositing a tuning layer over the bottom layer;

    c) depositing an interface layer over the tuning layer;

    d) re-sputtering the interface layer to conformally cover the tuning layer and the bottom layer;

    e) depositing a high k dielectric layer over the interface layer, wherein the high k dielectric layer has a thickness of about 80 angstroms to about 800 angstroms; and

    f) depositing an upper electrode layer over the dielectric layer.

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