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Semiconductor device and process for producing the same

  • US 6,358,838 B2
  • Filed: 01/17/2001
  • Issued: 03/19/2002
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Term
First Claim
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1. A process for producing a semiconductor device comprisinga step of forming an intermetal insulating film using a mixed gas comprising a vapor of monomethyltriethoxysilane represented by the formula:

  • RSi(OR′

    )3, wherein R is a methyl group and R′

    is an ethyl group, and a non-oxidizing gas by means of a plasma chemical vapor deposition method, and a step of forming wires.

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