Manufacturing method of silicon device
First Claim
1. A method of manufacturing a silicon device comprising:
- forming etching start patterns at a surface of a silicon substrate;
etching said silicon substrate by applying a voltage to said silicon substrate while said silicon substrate is immersed in a solution containing fluorine ions, with said silicon substrate used a positive electrode, to form etched portions extending into said silicon substrate from said etching start patterns; and
accelerating etching of said silicon substrate by increasing current flowing through said silicon substrate after said etched portions have reached a threshold depth in said silicon substrate, to form a free standing structure, including a part of said silicon substrate, in which neighboring etched portions are in communication with each other at a location deeper than the threshold depth.
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Abstract
A method of manufacturing a silicon device with a single crystal structure, including forming etching start patterns on a surface of a silicon substrate; etching the silicon substrate by applying a voltage to the silicon substrate while the silicon substrate is immersed in a solution containing fluorine ions, with the silicon substrate used a positive electrode, to form narrow etched portions that extend into the substrate from the etching start patterns; and accelerating etching of the silicon substrate by increasing current flowing through the silicon substrate after the narrow etched portions have reached a predetermined depth, so that neighboring etched portions are in communication with each other below the narrow etched portions and a free standing structure including part of the silicon substrate is formed, and a hollow portion is formed below the free standing structure.
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Citations
18 Claims
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1. A method of manufacturing a silicon device comprising:
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forming etching start patterns at a surface of a silicon substrate;
etching said silicon substrate by applying a voltage to said silicon substrate while said silicon substrate is immersed in a solution containing fluorine ions, with said silicon substrate used a positive electrode, to form etched portions extending into said silicon substrate from said etching start patterns; and
accelerating etching of said silicon substrate by increasing current flowing through said silicon substrate after said etched portions have reached a threshold depth in said silicon substrate, to form a free standing structure, including a part of said silicon substrate, in which neighboring etched portions are in communication with each other at a location deeper than the threshold depth. - View Dependent Claims (3, 5, 7, 9, 11)
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2. A method of manufacturing a silicon device comprising:
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forming etching start patterns at a surface of a silicon substrate;
etching said silicon substrate by applying a voltage to said silicon substrate while said silicon substrate is immersed in a solution containing fluorine ions, with said silicon substrate used a positive electrode, to form narrow etched portions extending into said silicon substrate from said etching start patterns;
accelerating etching of said silicon substrate by increasing current flowing through said silicon substrate after said narrow etched portions have reached a threshold depth in said silicon substrate, to form wide etched portions, wider than said narrow etched portions, at a location deeper than the threshold depth; and
forming a hollow passage in said silicon substrate by filling said narrow etched portions after said wide etched portions have reached a second threshold depth. - View Dependent Claims (4, 6, 8, 10, 12)
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13. A method of manufacturing a silicon device comprising:
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forming etching start patterns at a surface of a silicon substrate;
etching said silicon substrate by applying a voltage to said silicon substrate while said silicon substrate is immersed in a solution containing fluorine ions, with said silicon substrate used a positive electrode, to form etched portions extending into said silicon substrate from said etching start patterns; and
accelerating etching of said silicon substrate by increasing current flowing through said silicon substrate by changing the voltage applied to said silicon substrate, after said etched portions have reached a threshold depth in said silicon substrate, to form a free standing structure, including a part of said silicon substrate, in which neighboring etched portions are in communication with each other at a location deeper than the threshold depth. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification