MOCVD precursors based on organometalloid ligands
First Claim
Patent Images
1. A compound of formula I:
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whereinR1 is methyl, ethyl, isopropyl, n-propyl, isobutyl, s-butyl, n-butyl, CF3, C2F5, i-C3F7, n-C3F7, or —
C(CH3)(CF3)2;
R2 is H;
E1 is Si or Ge;
R3, R4, and R5 are independently C6 or lower alkyl; and
Y and Z are O.
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Abstract
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
52 Citations
22 Claims
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1. A compound of formula I:
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wherein R1 is methyl, ethyl, isopropyl, n-propyl, isobutyl, s-butyl, n-butyl, CF3, C2F5, i-C3F7, n-C3F7, or —
C(CH3)(CF3)2;
R2 is H;
E1 is Si or Ge;
R3, R4, and R5 are independently C6 or lower alkyl; and
Y and Z are O. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A metal-ligand complex of formula II:
Specification