Method for feeding gases for use in semiconductor manufacturing

• US 6,360,762 B2
• Filed: 01/22/2001
• Issued: 03/26/2002
• Est. Priority Date: 04/22/1999
• Status: Active Grant

• Current Assignee: Fujikin Incorporated, Tokyo Electron Limited
• Original Assignee: Fujikin Incorporated, Tokyo Electron Limited
• Inventors: Masuda, Naoya, Kitayama, Hirofumi, Kurono, Yoichi, Ikeda, Nobukazu
• Primary Examiner(s): LEE, KEVIN L
• Application Number:
  US09/765,665
• Publication Number:
  US 20010013363A1
• Time in Patent Office: 428 Days
• Field of Search: 137/624.11, 137/599.07, 137/607, 137/1
• US Class Current: 137/1
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: F17D 1/04 for distribution of gas
• CPC Class Codes: G05D 7/0641 using a plurality of throttling means G05D7/067 takes precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: Y10T 137/0318 Processes
• CPC Class Codes: Y10T 137/0352 Controlled by pressure
• CPC Class Codes: Y10T 137/86389 Programmer or timer
• CPC Class Codes: Y10T 137/87314 Electromagnetic or electric control [e.g., digital control, bistable electro control, etc.]
• CPC Class Codes: Y10T 137/87676 With flow control
• CPC Class Codes: Y10T 137/87692 With common valve operator

Abstract

An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.

Claims

1. A method for feeding gases to semiconductor manufacturing facilities, comprising the steps of:

providing a single flow rate controller unit for gas supply for a plurality of semiconductor manufacturing processes or steps;

serially supplying one or more types of gases to said manufacturing processes or steps by switching at specific time intervals to each process or step; and

regulating the flow rate by said single flow rate controller.

2. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 1, further comprising the step of simultaneously supplying one or more types of gases to a treatment reactor unit from a plurality of feed ports.

3. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 1, and further comprising the steps of:

determining data comprising flow rate control characteristics for each type of gas to be supplied and flow rate for each manufacturing process or step;

storing said data in a storage means; and

retrieving said data from said storage means at the time of said switching; and

wherein said step of regulating comprises regulating the flow rate with said flow rate controller based on said data.

4. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 1, wherein the flow rate controller is a pressure-type flow controller, and further comprising the following steps:

determining a flow factor against a reference gas for each of the types of gases to be supplied;

storing said data; and

when the type of gas is changed, adjusting a flow rate specifying signal Qs for the gas to be switched over to kQe, wherein Qs=kQe, wherein Qe is a set flow rate signal against the reference gas and k is a flow rate conversion rate.

5. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 1, wherein the flow rate controller is a pressure-type flow control system having a plurality of orifices with different bores in parallel;

and further comprising the step;

selectively actuating said orifices according to a flow rate of the gas to be supplied and to which the system is switched over.

6. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 2, and further comprising the steps of:

determining data comprising flow rate control characteristics for each type of gas to be supplied and flow rate for each manufacturing process or step;

storing said data in a storage means;

retrieving said data from said storage means at the time of said switching; and

regulating the flow rate with said flow rate controller based on said data.

7. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 2, wherein the flow rate controller is a pressure-type flow controller, and further comprising the following steps:

determining a flow factor against a reference gas for each of the types of gases to be supplied;

storing said data; and

when the type of gas is changed, adjusting a flow rate specifying signal Qs for the gas to be switched over to kQe, wherein Qs=kQe, wherein Qe is a set flow rate signal against the reference gas and k is a flow rate conversion rate.

8. A method for feeding gases to semiconductor manufacturing facilities as defined in claim 2, wherein the flow rate controller is a pressure-type flow control system having a plurlaity of orifices with different bores in paralle;

and further comprising the step;

selectively actuating said orifices according to a flow rate of the gas to be supplied and to which the system is switched over.