Method for fabricating a semiconductor device in a magnetron sputtering system

• US 6,361,662 B1
• Filed: 12/22/1997
• Issued: 03/26/2002
• Est. Priority Date: 12/27/1996
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Taguchi, Mitsuru, Maeda, Keiichi, Chiba, Yasuhiro
• Primary Examiner(s): Kalafut, Stephen
• Assistant Examiner(s): Mercado, Julian A.
• Application Number:
  US08/996,321
• Time in Patent Office: 1,555 Days
• Field of Search: 204/192.12, 204/298.16, 204/298.17, 204/298.19, 204/298.2, 204/192.2, 204/298.21, 427/527, 427/531, 438/765, 438/769, 438/682
• US Class Current: 204/192.2
• CPC Class Codes: C23C 14/165 by cathodic sputtering
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3426 Material
• CPC Class Codes: H01L 21/28052 the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer formed by metal ion implantation H01L21/28044
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518

Abstract

Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.

Claims

1. A method of fabricating a semiconductor device comprising the steps of:

providing a silicon substrate having a polysilicon gate on a surface of the substrate with source and drain regions in the surface of the substrate;

providing a magnetron sputtering system having a flat target of a ferromagnetic material consisting of cobalt, magnetic field applying means in the vicinity of a back surface of the target to apply magnetic field to a front surface of the target, magnetic field rotating means to rotate said magnetic field applying means so that the magnetic field on the front surface of the target is rotated, and means to suppress eddy currents on the front surface of the target by varying the rotational speed of the magnetic field rotating means;

positioning the substrate in the sputtering system;

forming a film of cobalt on the polysilicon gate and the source and drain regions by sputtering while rotating the magnetic field at a rotational speed selected for cobalt;

forming a cobalt silicide layer out of the cobalt film on surface layer portions of said polysilicon gate, source region and drain region by annealing said substrate, said annealing being in two steps separated by a wet etching step with the first annealing step being at a temperature range of 450°

to 550°

C. for 30 seconds and the second annealing step being at a range of 650°

to 800°

C. for 30 seconds.

2. A method of fabricating a semiconductor device comprising the steps of:

providing a magnetron sputtering system having a flat target of a ferromagnetic material consisting of nickel, magnetic field applying means in the vicinity of a back surface of the target to apply a magnetic field to a front surface of the target, magnetic field rotating means to rotate said magnetic field applying means so that the magnetic field on the front surface of the target is rotated, and means to suppress eddy currents on the front surface of the target by varying the rotational speed of the magnetic field rotating means;

providing a silicon substrate having a polysilicon gate on a surface of the substrate with source and drain regions in the surface of the substrate;

positioning the substrate in the sputtering system;

forming a film of nickel on the polysilicon gate and the source and drain regions by sputtering while rotating the magnetic field at a rotational rate for nickel;

forming a nickel silicide layer of the nickel film on surface layer portions of said polysilicon gate, source region and drain region by annealing said substrate in a single step at a temperature range of 400°

to 600°

C. for 30 seconds.