Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure
First Claim
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1. Method of manufacturing a thin layer which operates as at least one vertical electrical connection through its entire thickness, the thin layer comprising a conductive or semiconductive material whose electrical properties are disruptable by ion implantation using a predetermined implantation species, the method comprising:
- masking one face of a substrate comprising said material by masking means that define at least one masked area, the size of said masked area not exceeding a predetermined limiting dimension beyond which crack propagation is modified such that proper cleavage is inhibited;
performing ion implantation of the substrate through said masked face by means of said predetermined implantation species to thereby create, within a non-masked volume of the substrate and at a depth close to a mean depth of penetration of said predetermined implantation species, a layer of micro-cavities demarcating said thin layer;
removing the masking means; and
cleaving the substrate at the depth of the layer of micro-cavities in order to obtain said thin layer.
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Abstract
A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2). A method of manufacturing such a structure is also disclosed.
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Citations
25 Claims
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1. Method of manufacturing a thin layer which operates as at least one vertical electrical connection through its entire thickness, the thin layer comprising a conductive or semiconductive material whose electrical properties are disruptable by ion implantation using a predetermined implantation species, the method comprising:
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masking one face of a substrate comprising said material by masking means that define at least one masked area, the size of said masked area not exceeding a predetermined limiting dimension beyond which crack propagation is modified such that proper cleavage is inhibited;
performing ion implantation of the substrate through said masked face by means of said predetermined implantation species to thereby create, within a non-masked volume of the substrate and at a depth close to a mean depth of penetration of said predetermined implantation species, a layer of micro-cavities demarcating said thin layer;
removing the masking means; and
cleaving the substrate at the depth of the layer of micro-cavities in order to obtain said thin layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification