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Field effect transistor with organic semiconductor layer

  • US 6,362,509 B1
  • Filed: 10/06/2000
  • Issued: 03/26/2002
  • Est. Priority Date: 10/11/1999
  • Status: Expired due to Term
First Claim
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1. An integrated circuit (1) comprising a substrate (2) with an electrically insulating surface, on which surface are present:

  • an insulating layer (6);

    a semiconducting layer (5) which is at least substantially unpatterned;

    a first patterned layer (3) comprising a pattern of electrical conductors (4); and

    a second patterned layer (7) which comprises a pattern of electrical conductors (8) and which is separated from the first patterned layer (3) and from the semiconducting layer (5) by the insulating layer (6), wherein the first patterned layer (3) is in contact with the semiconducting layer (5) and comprises a first (10) and a second transistor (20), said first and second transistors (10, 20) each having a first (14, 24) and a second electrode (15, 25), of which electrodes (14, 24;

    15, 25) at least the first electrodes (14, 24) comprise a number of electrically conducting tracks (61, 62;

    63, 64) which are at least substantially parallel, characterized in that the first electrode (14) of the first transistor (10) and the first electrode (24) of the second transistor (20) both perform the same function of source and drain electrode;

    the circuit (1) comprises means for giving the first electrode (14) of the first transistor (10) and the first electrode (24) of the second transistor (20) in the first patterned layer (3) the same potential in operational condition; and

    the first patterned layer (3) between the first (10) and the second transistor (20) is free from any electrical conductor which has a potential other than that of the first electrode (14) of the first transistor (10) in the operational condition.

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