Cavity resonator for reducing phase noise of voltage controlled oscillator

• US 6,362,706 B1
• Filed: 03/31/2000
• Issued: 03/26/2002
• Est. Priority Date: 03/31/1999
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Chungwoo, Kwon, Yongwoo, Song, Insang, Song, Cimoo, Cheon, Changyul
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): TAKAOKA, DEAN O
• Application Number:
  US09/542,056
• Time in Patent Office: 725 Days
• Field of Search: 333/219, 333/230, 333/227
• US Class Current: 333/219
• CPC Class Codes: H01P 5/107 Hollow-waveguide/strip-line transitions
• CPC Class Codes: H01P 7/065 integrated in a substrate

Abstract

There is provided a cavity resonator for reducing the phase noise of electromagnetic waves output from a monolithic microwave integrated circuit (MMIC) voltage controlled oscillator (VCO) by utilizing a semiconductor (e.g., silicon, GaAs or InP) micro machining technique. In the cavity, instead of an existing metal cavity, a cavity, which is obtained by micro machining silicon or a compound semiconductor, is coupled to a microstrip line to allow the cavity resonator to be adopted in a reflection type voltage controlled oscillator. A coupling slot is formed by removing a predetermined size of the part of an upper ground plane film of a cavity facing to the microstrip line. Consequently, the cavity resonator reduces the phase noise of microwaves or millimeter waves which are output from a voltage controlled oscillator.

Claims

1. A cavity resonator comprising:

a semiconductor having a cavity which is defined by four sides, an upper surface and a lower surface;

a lower metal film located on said four sides and on said lower surface of said cavity in said semiconductor;

an upper ground plane metal film which covers said upper surface of said cavity in said semiconductor;

a microstrip line, of predetermined width, which extends from one end of the cavity across to the other end of the cavity to serve as a waveguide, wherein the microstrip line is disposed a uniform predetermined distance from the upper ground plane metal film of the cavity opposite to said lower surface of said cavity; and

a slot in said upper ground plane metal film, wherein the slot is positioned perpendicular to the microstrip line.

2. The cavity resonator of claim 1, wherein the lower metal film and the upper ground metal film are formed of a conductor selected from the group consisting of gold (Au), silver (Ag) and copper (Cu).

3. The cavity resonator of claim 1, wherein the microstrip line consists of at least one a conductor selected from the group consisting of gold (Au), silver (Ag) and copper (Cu).

4. The cavity resonator of claim 1, further comprising a substrate of a semiconductor or insulating material interposed between said microstrip line and said upper ground metal film wherein the predetermined distance between the microstrip line and the upper ground metal film is maintained by said substrate.

5. The cavity resonator of claim 4, further comprising:

through holes which are formed in said substrate for maintaining the distance between the microstrip line and the upper ground metal film, wherein the through holes are positioned on both sides of the microstrip line; and

grounding metal pads which are formed to be connected to the upper ground plane metal film through the through holes.

6. The cavity resonator of claim 4, wherein the semiconductor is silicon (Si) or a compound semiconductor.

7. The cavity resonator of claim 4, wherein the insulating material is glass.

8. A cavity resonator comprising:

a semiconductor having a cavity which is defined by four sides, an upper surface and a lower surface;

a lower metal film located on said four sides and on said lower surface of said cavity in said semiconductor;

an upper ground plane metal film which covers said upper surface of said cavity in said semiconductor;

a microstrip line, of predetermined width, which extends from one end of the cavity across to the other end of the cavity to serve as a waveguide, wherein the microstrip line is disposed a uniform predetermined distance from the upper ground plane metal film of the cavity opposite to said lower surface of said cavity; and

two slots, of predetermined dimension, in said upper ground plane metal film, wherein the two slots are parallel to each other and positioned on each side of the microstrip line; and

a matching resistor which is positioned within a gap, of predetermined width, of the microstrip line, wherein the resistor is positioned at the location corresponding to one end of the cavity.

9. The cavity resonator of claim 8, wherein the lower metal film and the upper ground metal film are formed of a conductor selected from the group consisting of gold (Au), silver (Ag) and copper (Cu).

10. The cavity resonator of claim 8, wherein the microstrip line consists of at least one a conductor selected from the group consisting of gold (Au), silver (Ag) and copper (Cu).

11. The cavity resonator of claim 8, further comprising a substrate of a semiconductor or insulating material interposed between said microstrip line and said upper ground metal film wherein the predetermined distance between the microstrip line and the upper ground metal film is maintained by said substrate.

12. The cavity resonator of claim 11, further comprising:

through holes which are formed in said substrate for maintaining the distance between the microstrip line and the upper ground metal film, wherein the through holes are positioned on both sides of the microstrip line; and

grounding metal pads which are formed to be connected to the upper ground plane metal film through the through holes.

13. The cavity resonator of claim 11, wherein the semiconductor is silicon (Si) or a compound semiconductor.

14. The cavity resonator of claim 11, wherein the insulating material is glass.