Cathode targets of silicon and transition metal

• US 6,365,014 B2
• Filed: 09/08/1997
• Issued: 04/02/2002
• Est. Priority Date: 11/29/1991
• Status: Expired due to Term

• Current Assignee: Vitro Flat Glass LLC (Compagnie De Saint-Gobain)
• Original Assignee: PPG Industries Ohio Incorporated (Nouryon BV)
• Inventors: Finley, James J.
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H.
• Application Number:
  US08/929,176
• Publication Number:
  US 20010008206A1
• Time in Patent Office: 1,667 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.22, 204/192.23, 204/298.07, 204/298.13, 148/423, 420/428, 420/578, 423/324
• US Class Current: 204/192.23
• CPC Class Codes: C03C 17/09 by deposition from the vapour phase
• CPC Class Codes: C03C 17/225 Nitrides
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 17/3642 the multilayer coating containing a metal layer
• CPC Class Codes: C03C 17/3652 the coating stack containing at least one sacrificial layer to protect the metal from oxidation
• CPC Class Codes: C03C 2217/23 Mixtures
• CPC Class Codes: C03C 2217/27 Mixtures of metals, alloys
• CPC Class Codes: C03C 2217/281 Nitrides
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: Y10S 428/913 Material designed to be responsive to temperature, light, moisture
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, for sputtering in oxygen, inert gas, nitrogen or a mixture of nitrogen and oxygen. The chromium in the target may be replaced in part with nickel to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.

Claims

1. A silicon alloy cathode target comprising:

a. silicon; and

b. transition metals selected from the group consisting of;

i) chromium, wherein the amount of chromium is between 5 and 25 weight percent and the amount of silicon is from 75 to 95 weight percent; and

ii) chromium and nickel wherein the alloy has a weight percent of nickel of 5 up to 15, at least 5 weight percent of chromium, and a weight percent of silicon of more than 30 where all weight percents are based on the combined weight of silicon, chromium and nickel; and

iii) iron wherein the alloy has an amount of iron up to about 8 weight percent based on the combined weight of silicon and iron.

2. A cathode target according to claim 1, wherein for the silicon alloy with transition metals of (ii) the weight percent of silicon in the silicon alloy is 42 or more.

3. A cathode target according to claim 1 consisting essentially of silicon and chromium.

4. A method for depositing coatings comprising silicon alloys comprising the steps of:

a. providing a cathode target according to claim 1, and

b. sputtering said target to deposit a coating on a surface of a substrate.

5. A silicon alloy cathode target, comprising:

a. silicon; and

b. transition metals selected from the group consisting of;

i) chromium and nickel wherein the alloy has a weight percent of nickel of from 5 to 15 percent, and a weight percent of chromium from 5 to 20 percent, and a weight percent of silicon of more than 30 based on the combined weight of silicon, chromium and nickel; and

ii) iron wherein the alloy has an amount of iron up to about 8 weight percent based on the combined weight of silicon and iron.

6. A method for depositing coatings comprising silicon alloy comprising the steps of:

a. maintaining a glass substrate in an evacuated chamber;

b. maintaining an atmosphere comprising a gas selected from the group consisting of inert gas, nitrogen, oxygen, and mixtures thereof; and

c. sputtering a cathode target comprising silicon alloy having silicon and transition metal selected from the group consisting of;

i) chromium wherein the chromium is present in an amount of 5 to 60 weight percent based on the total weight of silicon and chromium in the silicon and chromium alloy target which consists essentially of chromium and silicon and the gas for the atmosphere is oxygen or oxygen and nitrogen;

ii) chromium wherein the chromium is present in an amount of 5 to 25 weight percent based on the total weight of silicon and chromium in the silicon and chromium alloy target which consists essentially of chromium and silicon;

iii) chromium and nickel, wherein nickel is present in an amount of up to 15 weight percent, at least 5 weight percent of chromium is present, and for the silicon alloy silicon is present in an amount of a weight percent of more than 30 based on the combined weight of silicon, chromium and nickel and where the gas for the atmosphere is oxygen or oxygen and nitrogen;

iv) chromium and nickel, wherein nickel is present in an amount of 5 to 15 weight percent, with at least 5 weight percent of chromium is present, and for the silicon alloy silicon is present in an amount of a weight percent of more than 30 based on the combined weight of silicon, chromium, and nickel; and

v) iron wherein the silicon iron alloy has up to about 20 weight percent iron based on the combined weight of silicon and iron to deposit a coating on a surface of the substrate.

7. A method according to claim 6, wherein the atmosphere consists essentially of inert gas, and the coating consists essentially of silicon and 5 to 25 weight percent chromium based on the total weight of silicon and chromium.

8. A method according to claim 6, wherein the silicon alloy target has the transition metal of c(ii) and the atmosphere comprises nitrogen, and the coating comprises silicon-chromium nitride.

9. A method according to claim 6, wherein the atmosphere comprises nitrogen and oxygen, and the coating comprises silicon-chromium oxynitride.

10. A method according to claim 6, wherein the atmosphere comprises oxygen and inert gas, where oxygen is present in the gas mixture in an amount up to 50 percent and the coating comprises silicon-chromium oxide.

11. A method for depositing coatings comprising silicon alloy comprising the steps of:

a. maintaining a glass substrate in an evacuated chamber;

b. maintaining an atmosphere comprising gas selected from the group consisting of inert gas, nitrogen, oxygen, and mixtures thereof; and

c. sputtering a cathode target comprising silicon alloy of silicon-chromium-nickel alloy comprising 5 to 40 weight percent chromium and 5 to 15 weight percent nickel.

12. A method according to claim 11, wherein the atmosphere consists essentially of inert gas and the coating consists essentially of silicon, chromium and nickel.

13. A method according to claim 11, wherein the atmosphere comprises nitrogen, and the coating comprises silicon-chromium-nickel nitride.

14. A method according to claim 11, wherein the atmosphere comprises oxygen and the coating comprises silicon-chromium-nickel oxide.

15. A method according to claim 11, wherein the atmosphere comprises oxygen and nitrogen and the coating comprises silicon-chromium-nickel oxynitride.

16. A method for depositing coatings comprising silicon and chromium comprising the steps of:

a. maintaining a nonmetallic substrate in an evacuated chamber;

b. maintaining an atmosphere comprising a gas selected from the group consisting of inert gas, nitrogen, oxygen, and mixtures thereof; and

c. sputtering a cathode target comprising silicon and 5 to 20 weight percent chromium and 10 to 15 weight percent nickel all based on the total weight of silicon, chromium, and nickel to deposit a coating on a surface of the substrate.

17. A cathode target consisting essentially of silicon, nickel, and chromium, wherein nickel is present in an amount up to 15 weight percent, chromium is present in an amount of at least 5 weight percent, and silicon is present in an amount of more than 30 weight percent of silicon.

18. A cathode target consisting essentially of silicon and iron, wherein iron is present in an amount up to about 8 weight percent based on the combined weight of silicon and iron.