Method for producing a suspended element in a micro-machined structure

• US 6,365,056 B1
• Filed: 07/27/1999
• Issued: 04/02/2002
• Est. Priority Date: 12/30/1996
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Robert, Philippe, Grange, Hubert, Michel, France
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US09/331,255
• Time in Patent Office: 980 Days
• Field of Search: 216/2, 216/11, 216/58, 216/67, 216/72, 216/79
• US Class Current: 216/2
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively

Abstract

A process for making at least one suspended element uses an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed. The process uses a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by etching of the surface layer of the suspended element delimited in the first phase and which is adjacent to the stop layer.

Claims

1. Process for making at least one suspended element by using an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed, in which the process used is a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by isotropic etching of the second layer of the suspended element delimited in the first phase and which is adjacent to the stop layer.

2. Process according to claim 1, in which the dry etching technique used is a reactive etching type.

3. Application of the process according to claim 1 to the production of at least one suspended element in a structure in which the stop layer is made of silicon dioxide and the second layer is made of silicon.

4. Application of the process according to claim 2 to the production of at least one suspended element in a structure in which the stop layer is made of silicon dioxide and the second layer is made of silicon.

5. Process for making at least one suspended element by using an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed, in which the process used is a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by etching of the second layer of the suspended element delimited in the first phase and which is adjacent to the stop layer, wherein the transition from the first phase to the second phase is at least partially attributable to interaction between the gas and the stop layer.

6. Process according to claim 5, in which the dry etching technique used is a reactive etching type.

7. Application of the process according to claim 5 to the production of at least one suspended element in a structure in which the stop layer is made of silicon dioxide and the second layer is made of silicon.

8. Application of the process according to claim 6 to the production of at least one suspended element in a structure in which the stop layer is made of silicon dioxide and the second layer is made of silicon.