Method for nitride based laser diode with growth substrate removed using an intermediate substrate

• US 6,365,429 B1
• Filed: 03/26/1999
• Issued: 04/02/2002
• Est. Priority Date: 12/30/1998
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Bour, David P., Romano, Linda T., Mei, Ping, Kneissl, Michael A.
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): MENZ, LAURA MARY
• Application Number:
  US09/276,856
• Time in Patent Office: 1,103 Days
• Field of Search: 438/458, 438/483, 438/796, 438/22, 438/977, 438/795, 438/798, 438/464, 438/479, 438/46, 438/29, 438/33, 438/68, 438/455, 257/190, 257/191, 257/192
• US Class Current: 438/46
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence
• CPC Class Codes: H01S 5/4031 Edge-emitting structures

Abstract

A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.

Claims

1. A method for making a nitride laser diode array structure comprising the steps of:

providing a semiconductor membrane having an insulating substrate attached on a first side of said semiconductor membrane;

attaching a support substrate to a second side of said semiconductor membrane;

removing said insulating substrate from said first side of said semiconductor membrane by exposing said insulating substrate to laser light;

placing a metal layer on said first side of said semiconductor membrane;

attaching a thermally conducting substrate to said first side of said semiconductor membrane; and

removing said support substrate from said second side of said semiconductor membrane.

2. The method of claim 1 wherein said insulating substrate is comprised of sapphire.

3. The method of claim 1 wherein the step of attaching said thermally conducting substrate to said first side of said semiconductor membrane includes putting a solder layer on said thermally conducting substrate.

4. The method of claim 3 wherein said solder layer includes a material selected from the group consisting of In, PbSn, and AuSn.

5. The method of claim 1 wherein the step of attaching said support substrate to said second side of said semiconductor membrane includes using wax to attach said support substrate to said second side.

6. The method of claim 1 wherein the step of removing said insulating substrate includes polishing of said insulating substrate prior to exposure to laser light.

7. The method of claim 1 wherein said semiconductor membrane is comprised of In, Ga, Al and N.

8. The method of claim 1 wherein said thermally conducting substrate includes a material selected from the group consisting of silicon, silicon carbide, copper and diamond.

9. A method for making a nitride laser diode array comprising the steps of:

providing a semiconductor membrane having a first crystal plane, said semiconductor membrane having an insulating substrate attached to a first side of said semiconductor membrane and having a plurality of electrodes attached to a second side of said semiconductor membrane;

attaching a support substrate to said second side of said semiconductor membrane;

removing said insulating substrate from said first side of said semiconductor membrane;

placing a metal layer on said first side of said semiconductor membrane;

attaching a thermally conducting substrate having a second crystal plane to said first side of said semiconductor membrane such that said first and said second crystal planes are aligned; and

removing said support substrate from said second side of said semiconductor membrane.

10. The method of claim 9 further comprising the step of:

cleaving said thermally conducting substrate along said second crystal plane and cleaving said semiconductor membrane along said first crystal plane to make facets in said laser diode array.

11. The method of claim 9 wherein said thermally conducting substrate is silicon.