CMOS active pixel with scavenging diode
First Claim
Patent Images
1. A complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
- a photodetector;
active circuit components adapted to read signals from said photodetector;
a voltage source supplying voltage to said circuit components; and
a scavenging diode connected to said voltage source, wherein said scavenging diode prevents electrons outside said photodetector from migrating to said photodetector.
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Abstract
A method and structure of a camera includes an array of pixels making up a complementary metal oxide semiconductor active pixel image sensor. At least one of the pixels includes a photodetector, a voltage source for supplying voltage to the photodetector, and a scavenging diode adjacent the photodetector that can be connected to the voltage source. The scavenging diode is positioned between adjacent ones of the pixels and prevents electrons outside the photodetector from migrating to the photodetector.
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Citations
26 Claims
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1. A complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
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a photodetector;
active circuit components adapted to read signals from said photodetector;
a voltage source supplying voltage to said circuit components; and
a scavenging diode connected to said voltage source, wherein said scavenging diode prevents electrons outside said photodetector from migrating to said photodetector. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
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a photodetector;
active circuit components adapted to read signals from said photodetector;
a first voltage source supplying voltage to said circuit components; and
a scavenging diode connected to a second voltage source, separate from said first voltage source, wherein said scavenging diode prevents electrons outside said photodetector from migrating to said photodetector. - View Dependent Claims (8, 9, 10, 11)
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12. A camera/imaging system having a complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
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a photodetector;
active circuit components adapted to read signals from said photodetector;
a voltage source supplying voltage to said circuit components; and
a scavenging diode connected to said voltage source, wherein said scavenging diode prevents electrons outside said photodetector from migrating to said photodetector. - View Dependent Claims (13, 14, 15, 16)
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17. A camera/imaging system having a complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
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a photodetector;
active circuit components adapted to read signals from said photodetector;
a first voltage source supplying voltage to said circuit components; and
a scavenging diode connected to a second voltage source, separate from said first voltage source, wherein said scavenging diode prevents electrons outside said photodetector from migrating to said photodetector. - View Dependent Claims (18, 19, 20, 21)
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22. A complementary metal oxide semiconductor (CMOS) active pixel image sensor, comprising an array of pixels, at least one of said pixels comprising:
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a substrate having a first conductivity;
a photodetector region within said substrate having a second conductivity; and
a scavenging diode region within said substrate having said second conductivity, said scavenging diode region being positioned and between adjacent photodetector regions, such that said scavenging diode prevents electrons outside said photodetector region from migrating to said photodetector region. - View Dependent Claims (23, 24, 25, 26)
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Specification