Self-aligned common carrier

• US 6,366,468 B1
• Filed: 04/28/2000
• Issued: 04/02/2002
• Est. Priority Date: 04/28/2000
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Pan, Alfred I-Tsung
• Primary Examiner(s): Gandhi, Jayprakash N.
• Assistant Examiner(s): Tran, Thanh Y.
• Application Number:
  US09/560,943
• Time in Patent Office: 704 Days
• Field of Search: 361/760, 361/761, 361/764, 361/762, 361/783, 361/798, 361/782, 361/767, 361/768, 361/771, 361/801, 361/811, 361/820, 297/39, 257/723, 257/724
• US Class Current: 361/761
• CPC Class Codes: B41J 2/14024 Assembling head parts
• CPC Class Codes: B41J 2/1408 Structure dealing with thermal variations, e.g. cooling device, thermal coefficients of materials
• CPC Class Codes: B41J 2/14201 Structure of print heads with piezoelectric elements
• CPC Class Codes: B41J 2202/20 Modules
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/76155 Jetting means, e.g. ink jet
• CPC Class Codes: H01L 2224/82102 using jetting, e.g. ink jet
• CPC Class Codes: H01L 2224/83136 involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/95085 being a liquid, e.g. for fluidic self-assembly
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/10158 at the passive surface
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15155 : the shape of the recess being other than a cuboid
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

Precision alignment of one or more parts on a common carrier is described. A self-aligned common carrier includes a carrier substrate having one or more pockets formed in the substrate. Each pocket includes a side profile formed in the pocket. A chip having an identical side profile that complements the side profile in the pocket is mounted to the carrier substrate by inserting the chip into the pocket. The complementary side profiles result in near perfect self-alignment between the chip and at least two orthogonal planes of the carrier substrate. The chip and the carrier substrate can be made from a single crystal semiconductor material and the side profiles can be formed by anisotropic etch process that selectively etches the chip and the substrate along a predetermined crystalline plane. The chip and the carrier substrate can be single crystal silicon having a (100) crystalline orientation and the side profiles can be formed by selectively etching the silicon along a (111) crystalline plane. The matching coefficients of thermal expansion between the chip and the carrier substrate substantially reduces thermal stress related interconnect failures and misalignment between the chip and the carrier substrate. The carrier substrate and the chip can be anodically bonded to each other by oxidizing either one of the carrier substrate and the chip and etching the side profiles so that they are atomically flat.

Claims

1. A self-aligned common carrier, comprising:

a carrier substrate including a pocket formed in a mounting surface thereof and extending at least partially towards a backside surface of the carrier substrate,

the pocket includes a first side profile formed on at least a portion thereof; and

a chip including a second side profile formed on at least a portion of a base surface of the chip, the second side profile is identical to the first side profile so that the first and second side profiles complement each other, and

the chip is mounted to the carrier substrate by inserting the base surface of the chip into the pocket so that the second side profile is mated to the first side profile, wherein the chip is positioned in near perfect self-alignment with at least two orthogonal planes of the carrier substrate.

2. The self-aligned common carrier of claim 1, wherein the carrier substrate and the chip are made from a single crystal semiconductor material and the first and second side profiles are formed by etching those side profiles along identical crystalline planes of the single crystal semiconductor material.

3. The self-aligned common carrier of claim 1, wherein the carrier substrate and the chip are made from a material comprising single crystal silicon and the first and second side profiles are formed by etching the first and second side profiles along identical crystalline planes of the single crystal silicon.

4. The self-aligned common carrier of claim 3, wherein the mounting surface and the base surface have a 100 crystalline orientation, the first side profile is formed by etching the mounting surface along a 111 crystalline plane, and the second side profile is formed by etching the base surface along a 111 crystalline plane.

5. The self-aligned common carrier of claim 4, wherein the 111 crystalline plane of the first side profile intersects the mounting surface of the carrier substrate at an angle of about 54.74 degrees and the 111 crystalline plane of the second side profile intersects the base surface of the chip at an angle of about 54.74 degrees.

6. The self-aligned common carrier of claim 4, wherein the first and second side profiles are atomically flat along at least a portion of their respective 111 crystalline planes and the chip is mounted to the carrier substrate by an anodic bond between the first and second side profiles.

7. The self-aligned common carrier of claim 6 and further comprising an adhesive adapted to fill a peripheral gap between the pocket and the chip when the chip is mounted to the carrier substrate, whereby the chip is fixedly retained in the pocket and the peripheral gap is sealed by the adhesive.

8. The self-aligned common carrier of claim 1, wherein the orthogonal planes are an X-plane and a Y-plane of the carrier substrate.

9. The self-aligned common carrier of claim 8, wherein the chip is substantially self-aligned with a Z-plane of the carrier substrate.

10. The self-aligned common carrier of claim 1 and further comprising:

at least two electrically conductive nodes, the electrically conductive nodes are disposed on either one of the chip and the carrier substrate; and

an interconnect adapted to electrically connect the electrically conductive nodes.

11. The self-aligned common carrier of claim 1, wherein either one of the first and second side profiles includes a low viscosity adhesive disposed thereon, the low viscosity adhesive is adapted to lubricate the first and second side profiles and to effectuate mating between the first and second side profiles by reducing friction therebetween.

12. The self-aligned common carrier of claim 1 and further comprising an adhesive adapted to fill a peripheral gap between the pocket and the chip when the chip is mounted to the carrier substrate, whereby the chip is fixedly retained in the pocket and the peripheral gap is sealed by the adhesive.

13. The self-aligned common carrier of claim 1, wherein the chip is a component selected from a group consisting of an inkjet printhead, a thermal inkjet printhead, a semiconductor, an IC, an ASIC, a MicroElectroMechanical System, and a fluidic device.