Electrochemical mechanical planarization apparatus and method

• US 6,368,190 B1
• Filed: 01/26/2000
• Issued: 04/09/2002
• Est. Priority Date: 01/26/2000
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Guardian Corp. (Broadcom, Inc.)
• Inventors: Miceli, Frank, Easter, William G., Maze, John A. III
• Primary Examiner(s): Hail, III, Joseph J.
• Assistant Examiner(s): OJINI, EZIAMARA ANTHONY
• Application Number:
  US09/491,836
• Time in Patent Office: 804 Days
• Field of Search: 451/5, 451/36, 451/75, 451/41, 451/287, 451/288
• US Class Current: 451/41
• CPC Class Codes: B24B 37/046 using electric current
• CPC Class Codes: H01L 21/32125 by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Abstract

An apparatus for the electrochemical mechanical planarization of semiconductor wafers includes a rotatable platen and a polishing pad disposed on the platen. The polishing pad has top and bottom surfaces. A wafer carrier is disposed proximate to the platen for pressing a semiconductor wafer against the platen. At least one carrier electrode is disposed on the carrier and is adapted to electrically connect an electrically conducting surface of the semiconductor wafer to an electrolytic circuit including a potential source. A platen electrode is operatively connected to the platen. The platen electrode electrically connects an electrolytic solution disposed on the polishing pad to the potential source and to the electrode on the wafer carrier to complete the electrolytic circuit. The platen electrode has a substantially circular circumference for discharging electrons into the electrolytic solution. The platen electrode is substantially devoid of portions under the bottom surface of the polishing pad.

Claims

1. An electrochemical mechanical planarization apparatus, comprising;

a rotatable platen;

a polishing pad disposed on said platen, said polishing pad having top and bottom surfaces;

at least one outlet for supplying an electrolytic solution onto said polishing pad;

at least one wafer carrier disposed proximate to said platen for placing a wafer against said platen;

at least one carrier electrode disposed on said carrier that electrically connects an electrically conductive surface of said wafer to an electrolytic circuit; and

a platen electrode operatively connected to said platen that electrically connects said electrolytic solution disposed on said polishing pad to said electrolytic circuit, said platen electrode having a substantially circular circumference for discharging electrons into said electrolytic solution, said platen electrode being devoid of portions under said bottom surface of said pad.

2. The apparatus of claim 1, wherein said platen electrode is disposed around the circumference of said platen.

3. The apparatus of claim 1, wherein said platen electrode is provided as a circumferential portion of said polishing pad.

4. The apparatus of claim 1, further comprising an insulative layer on said platen for electrically isolating said platen from said electrolytic circuit.

5. The apparatus of claim 1, wherein said platen electrode comprises copper.

6. The apparatus of claim 1, wherein said electrolytic solution comprises abrasive particles and copper sulfate.

7. The apparatus of claim 1, wherein said electrolytic solution comprises at least one inhibitor.

8. A method for polishing semiconductor wafers, comprising the steps of:

placing a wafer with a metal surface on a carrier having a carrier electrode adapted to make an electrical connection to said metal surface;

electrically connecting said carrier electrode to a potential source;

placing the wafer against a polishing pad on a platen, said platen having at least one platen electrode with a substantially circular perimeter and being substantially devoid of portions under said polishing pad; and

flowing an electrolytic solution over said polishing pad, said electrolytic solution completing an electrolytic circuit between said metal surface, said carrier electrode, said potential source and said platen electrode.

9. The method of claim 8, wherein said platen electrode is disposed around the circumference of said platen.

10. The method of claim 8, wherein said platen electrode is provided as a circumferential portion of said polishing pad.

11. The method of claim 8, further comprising the step of rotating at least one of said wafer carrier and said platen.

12. A polishing pad for electrochemical mechanical planarization, comprising a substantially planar polishing pad body portion having top and bottom surfaces, and a conductive electrode portion having a substantially circular circumference, substantially none of said conductive electrode portion being under said bottom surface of said polishing pad body portion.