Adjustable energy quantum thin film plasma processing system
First Claim
1. A multiple power non arc-based thin film plasma processing system comprising:
- a. a switch-mode power supply;
b. a coating chamber having an anode and cathode;
c. a solid material disposed within said coating chamber;
d. a first power control system to which said switch-mode power supply is responsive and which affirmatively powers an arc preparatory to non arc-based processing;
e. a second power control system to which said switch-mode power supply is responsive and which achieves non arc-based processing; and
f. a switch to which said first and second power control systems are each responsive and which acts while said switch-mode power supply is operating.
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Abstract
A thin film plasma processing system which includes multiple power environments and circuitry is described so as to encompass a variety of configurations. The environments may establish an energy quantum which may be interactively adjusted such as for conditioning or processing when new targets or materials are inserted. The energy quantum can be increased from the traditionally low energy storage of a switch-mode power supply to a higher energy to allow more intense arc occurrences and, thus, the more rapid conditioning of a target. Switching between environments can be achieved manually or automatically through timing or through arc or plasma electrical characteristics sensing. Energy quantum may be adjusted through the inclusion of energy storage elements, hardwired elements, or through software configurations such as are possible with the utilization of a programmable processor. Applications for DC switch-mode thin film processing systems are specifically shown.
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Citations
35 Claims
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1. A multiple power non arc-based thin film plasma processing system comprising:
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a. a switch-mode power supply;
b. a coating chamber having an anode and cathode;
c. a solid material disposed within said coating chamber;
d. a first power control system to which said switch-mode power supply is responsive and which affirmatively powers an arc preparatory to non arc-based processing;
e. a second power control system to which said switch-mode power supply is responsive and which achieves non arc-based processing; and
f. a switch to which said first and second power control systems are each responsive and which acts while said switch-mode power supply is operating. - View Dependent Claims (2, 3, 4, 5, 14, 16, 18, 20, 21, 22, 24, 25, 26, 28, 29, 34, 35)
a. a DC power source;
b. an AC generator responsive to said DC power source;
c. an AC to DC converter responsive to said AC generator; and
d. a DC output stage, wherein said DC output stage comprises conditioning circuitry and non arc-based processing circuitry.
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6. A multiple power non arc-based thin film plasma processing system comprising:
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a. a switch-mode power supply;
b. a coating chamber having an anode and cathode;
c. a solid material disposed within said coating chamber;
d. conditioning circuitry responsive to said switch-mode power supply which affirmatively powers an arc;
e. non arc-based processing circuitry responsive to said switch-mode power supply; and
f. a switch to which said conditioning and non arc-based processing circuitry are each responsive. - View Dependent Claims (7, 8, 13, 15, 17, 19, 23, 27)
a. a DC power source;
b. an AC generator responsive to said DC power source;
c. an AC to DC converter responsive to said AC generator; and
d. a DC output stage, wherein said DC output stage comprises said conditioning circuitry and said non arc-based processing circuitry.
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13. A multiple power non arc-based thin film plasma processing system as described in claim 6 wherein an arc energy quantum of said conditioning circuitry is greater than an arc energy quantum of said non arc-based processing circuitry.
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15. A multiple power non arc-based thin film plasma processing system as described in claim 6 wherein said conditioning circuitry comprises response delay circuitry which is responsive to said switch.
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17. A multiple power non arc-based thin film plasma processing system as described in claim 6 wherein said conditioning circuitry comprises an arc energy storage element which is responsive to said switch.
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19. A multiple power non arc-based thin film plasma processing system as described in claim 6 and further comprising a processing timer element which is responsive to said conditioning circuitry.
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23. A multiple power non arc-based thin film plasma processing system as described in claim 19 wherein said switch is responsive to said processing timer element.
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27. A multiple power non arc-based thin film plasma processing system as described in claim 6 wherein said conditioning circuitry comprises a timer.
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9. A multiple power non arc-based thin film plasma processing system comprising:
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a. a switch-mode power supply having an arc occurrence reaction time;
b. a coating chamber having an anode and cathode connected to said switch-mode power supply;
c. a solid material disposed within said coating chamber; and
d. a variable reaction control which changes said arc occurrence reaction time. - View Dependent Claims (10, 11, 12)
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30. A multiple power non arc-based thin film plasma processing system comprising:
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a. a DC power source;
b. an AC generator responsive to said DC power source;
c. an AC to DC converter responsive to said AC generator;
d. a coating chamber having a cathode and an anode;
e. a capacitive element capable of storing arc energy which may be released by an arc and which is in parallel with said cathode and said anode; and
f. a switch to which said capacitive element is responsive and which selectively acts to allow said capacitive element to store said arc energy during processing and to prevent said capacitive element from storing said arc energy during processing.
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31. A multiple power non arc-based thin film plasma processing system comprising:
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a. a DC power source;
b. an AC generator responsive to said DC power source;
c. an AC to DC converter responsive to said AC generator;
d. a coating chamber having a cathode and an anode;
e. an inductive element capable of storing arc energy which may be released by an arc and which is in series with said cathode and said anode; and
f. a switch to which said inductive element is responsive and which selectively acts to allow said inductive element to store said arc energy during processing and to prevent said inductive element from storing said arc energy during processing.
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32. A multiple power non arc-based thin film plasma processing system comprising:
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a. a switch-mode power supply;
b. a coating chamber having a cathode and an anode responsive to said switch-mode power supply;
c. a switch which reacts while said switch-mode power supply is operating; and
d. a variable, arc occurrence reaction timer to which said switch-mode power supply is responsive during operation. - View Dependent Claims (33)
a. a DC power source;
b. an AC generator responsive to said DC power source; and
c. an AC to DC converter responsive to said AC generator.
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Specification