Trench MOS gate device

• US 6,368,920 B1
• Filed: 06/11/1998
• Issued: 04/09/2002
• Est. Priority Date: 04/10/1996
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Beasom, James Douglas
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US09/096,217
• Time in Patent Office: 1,398 Days
• Field of Search: 438/270, 438/271, 438/268, 438/138, 438/287, 438/589, 438/981, 438/FOR.363, 438/591, 148/DIG.163
• US Class Current: 438/270
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

The present invention is directed to an improved trench MOS gate device that comprises a trench whose floor and sidewalls include layers of dielectric material, the layers each having a controlled thickness dimension. These thickness dimensions are related by a controlled floor:sidewall layer thickness ratio, which is established by individually controlling the thickness of each of the floor and sidewall dielectric layers. This floor to sidewall layer thickness ratio is preferably at least 1 to 1, more preferably at least 1.2 to 1. Further in accordance with the present invention, a process for forming an improved trench MOS gate device comprises etching a trench in a silicon device wafer and forming layers of dielectric material on the trench floor and on the sidewalls, each layer having a controlled thickness dimension. The thickness dimensions are related by a controlled floor to sidewall layer thickness ratio that is preferably at least 1 to 1. When silicon dioxide is employed as the dielectric material, the layers preferably comprise a composite of thermally grown and deposited silicon dioxide. The trench containing the dielectric layers is filled with polysilicon, and an insulator layer is formed over the polysilicon, thereby forming a trench gate. A patterned electrically conducting metallic interconnect is formed over the trench gate.

Claims

1. A process for forming a trench MOS gate device comprising:

etching a trench in a silicon device wafer, said trench having a floor and sidewalls;

forming a first layer consisting essentially of thermally grown silicon dioxide on each of said floor and said sidewalls, said first layer on said floor having a thickness less than the thickness of said first layer on said sidewalls;

forming a second layer consisting essentially of deposited silicon dioxide on said first layer, said second layer on said floor having a thickness greater than the thickness of said second layer on said sidewalls, said first and second layers together forming a silicon dioxide composite layer on each of said floor and said sidewalls, said composite layers having controlled thickness dimensions related by a controlled floor to sidewall thickness ratio of at least 1 to 1, said ratio being obtained by individually controlling the thickness dimensions of each of said thermally grown silicon dioxide and deposited silicon dioxide layers included in each of said floor and sidewall composite layers;

filling said trench containing said composite layers with polysilicon;

applying an insulator over said polysilicon, thereby forming a trench gate; and

forming a patterned electrically conducting metallic interconnect on said trench gate.

2. A process according to claim 1 further comprising:

forming a dielectric protection layer over said metallic interconnect.

3. A process according to claim 1, wherein said ratio is at least 1.2 to 1.

4. A process according to claim 1, wherein said floor layer of silicon dioxide has a thickness of 300 to 3,000 angstroms.

5. A process according to claim 1, wherein said sidewall layers of silicon dioxide have a thickness of 200 to 1,500 angstroms.

6. A process according to claim 1, wherein said thermally grown silicon dioxide comprises the product of reaction of silicon in an oxygen-containing atmosphere.

7. A process according to claim 6, wherein said reaction is carried out at a temperature of 700°

to 1050°

C.

8. A process according to claim 1, wherein said deposited silicon dioxide comprises the reaction product of a volatile silicon-containing compound deposited by chemical vapor deposition.

9. A process according to claim 8, wherein said silicon-containing compound is a silane compound.

10. A process according to claim 9, wherein said silicon compound is tetraethoxysilane.

11. A process according to claim 8, wherein said chemical vapor deposition is carried out at a temperature of 300°

to 800°

C.

12. A process according to claim 8, wherein said chemical vapor deposition forms silicon dioxide on said floor at a deposition rate faster than the deposition rate on said sidewalls.

13. A process according to claim 12, wherein the deposition rate on said floor is at least about 1.5 times faster than the deposition rate on said sidewalls.

14. A process according to claim 1, further comprising:

annealing said deposited silicon dioxide.

15. A process according to claim 1 wherein the trench MOS gate device comprises a DMOS transistor.

16. A process according to claim 1 wherein the trench MOS gate device comprises an insulated gate bipolar transistor.

17. A process according to claim 1 wherein the trench MOS gate device comprises an MOS-controlled thyristor.

18. A process according to claim 1, wherein said ratio is about 1.35 to 1.