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Diffusion inhibited dielectric structure for diffusion enhanced conductor layer

  • US 6,368,952 B1
  • Filed: 08/15/2000
  • Issued: 04/09/2002
  • Est. Priority Date: 08/15/2000
  • Status: Expired due to Term
First Claim
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1. A method for forming a microelectronic fabrication comprising:

  • providing a substrate;

    forming over the substrate a microelectronic device passivated with a patterned first dielectric layer in turn annularly surrounded by a patterned second dielectric layer; and

    forming over the substrate a patterned conductor layer separated from the microelectronic device by the patterned first dielectric layer and the patterned second dielectric layer, wherein;

    the patterned first dielectric layer is formed from a first dielectric material having a first diffusion coefficient with respect to a conductor material from which is formed the patterned conductor layer;

    the patterned second dielectric layer is formed from a second dielectric material having a second diffusion coefficient with respect to the conductor material from which is formed the patterned conductor layer; and

    the first diffusion coefficient is greater than the second diffusion coefficient.

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