Diffusion inhibited dielectric structure for diffusion enhanced conductor layer
First Claim
1. A method for forming a microelectronic fabrication comprising:
- providing a substrate;
forming over the substrate a microelectronic device passivated with a patterned first dielectric layer in turn annularly surrounded by a patterned second dielectric layer; and
forming over the substrate a patterned conductor layer separated from the microelectronic device by the patterned first dielectric layer and the patterned second dielectric layer, wherein;
the patterned first dielectric layer is formed from a first dielectric material having a first diffusion coefficient with respect to a conductor material from which is formed the patterned conductor layer;
the patterned second dielectric layer is formed from a second dielectric material having a second diffusion coefficient with respect to the conductor material from which is formed the patterned conductor layer; and
the first diffusion coefficient is greater than the second diffusion coefficient.
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Accused Products
Abstract
Within a method for forming a microelectronic fabrication, there is first provided a substrate. There is then formed over the substrate a microelectronic device passivated with a patterned first dielectric layer in turn annularly surrounded by a patterned second dielectric layer. There is also formed over the substrate a patterned conductor layer separated from the microelectronic device by the patterned first dielectric layer and the patterned second dielectric layer. Within the method: (1) the patterned first dielectric layer is formed from a first dielectric material having a first diffusion coefficient with respect to a conductor material from which is formed the patterned conductor layer; (2) the patterned second dielectric layer is formed from a second dielectric material having a second diffusion coefficient with respect to the conductor material from which is formed the patterned conductor layer; and (3) the first diffusion coefficient is greater than the second diffusion coefficient.
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Citations
18 Claims
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1. A method for forming a microelectronic fabrication comprising:
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providing a substrate;
forming over the substrate a microelectronic device passivated with a patterned first dielectric layer in turn annularly surrounded by a patterned second dielectric layer; and
forming over the substrate a patterned conductor layer separated from the microelectronic device by the patterned first dielectric layer and the patterned second dielectric layer, wherein;
the patterned first dielectric layer is formed from a first dielectric material having a first diffusion coefficient with respect to a conductor material from which is formed the patterned conductor layer;
the patterned second dielectric layer is formed from a second dielectric material having a second diffusion coefficient with respect to the conductor material from which is formed the patterned conductor layer; and
the first diffusion coefficient is greater than the second diffusion coefficient. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A microelectronic fabrication comprising:
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a substrate;
a microelectronic device formed over the substrate and passivated with a patterned first dielectric layer in turn annularly surrounded by a patterned second dielectric layer; and
a patterned conductor layer formed over the substrate and separated from the microelectronic device by the patterned first dielectric layer and the patterned second dielectric layer, wherein;
the patterned first dielectric layer is formed from a first dielectric material having a first diffusion coefficient with respect to a conductor material from which is formed the patterned conductor layer;
the patterned second dielectric layer is formed from a second dielectric material having a second diffusion coefficient with respect to the conductor material from which is formed the patterned conductor layer; and
the first diffusion coefficient is greater than the second diffusion coefficient. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification