Semiconductor device and method of manufacturing the semiconductor device
First Claim
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1. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:
- an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein a tantalum oxide layer adjacent to the tantalum layer is formed adjacent to the gate insulating film and an end portion of said tantalum oxide layer is aligned with an end portion of said gate insulating film.
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Abstract
A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.
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Citations
34 Claims
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1. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein a tantalum oxide layer adjacent to the tantalum layer is formed adjacent to the gate insulating film and an end portion of said tantalum oxide layer is aligned with an end portion of said gate insulating film. - View Dependent Claims (2, 8, 9, 10, 31)
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3. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein a tantalum oxide layer is adjacent to the tantalum layer at a region where the tantalum layer does not overlap with the conductive layer comprising aluminum or aluminum as its main ingredient. - View Dependent Claims (5, 6)
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4. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein an end portion of the tantalum layer protrudes outside of the conductive layer comprising aluminum or aluminum as its main ingredient, and wherein a tantalum oxide layer adjacent to the tantalum layer is formed adjacent to the gate insulating film and an end portion of said tantalum oxide layer is aligned with an end portion of said gate insulating film.
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7. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film formed on said active layer; and
a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein an end portion of the tantalum layer protrudes outside of the conductive layer comprising aluminum or aluminum as its main ingredient, and wherein a tantalum oxide layer adjacent to the tantalum layer is formed on the gate insulating film and an end portion of said tantalum oxide layer is aligned with an end portion of said gate insulating film.
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11. A semiconductor device having a plurality of TFTs formed on a substrate, each of the TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a valve metal layer and a conductive layer, wherein an oxide layer of the valve metal layer is adjacent to said gate insulating film and end portion of said oxide layer of the valve metal layer is aligned with an end portion of the gate insulating film. - View Dependent Claims (12, 13, 32)
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14. A semiconductor device having a plurality of TFTs formed on the same substrate, each of the TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a valve metal layer and a conductive layer, wherein an oxide layer of the valve metal layer is located at a region where the valve metal layer does not overlap with the conductive layer, and wherein end portion of said oxide layer of the valve metal layer is aligned with an end portion of the gate insulating film. - View Dependent Claims (15, 16, 17, 18, 19, 33)
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20. A semiconductor device having a plurality of TFTs formed on a substrate, each of the TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film adjacent to said active layer; and
a gate electrode comprising a lamination of a valve metal layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein an end portion of the valve metal layer protrudes outside of the conductive layer comprising aluminum or aluminum as its main ingredient, and an oxide layer of the valve metal layer is formed adjacent to said gate insulating film, and wherein end portion of said oxide layer of the valve metal layer is aligned with an end portion of the gate insulating film. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A semiconductor device having a plurality of TFTs formed on a substrate, each of the TFTs comprising:
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an active layer comprising at least a channel forming region, and source and drain regions;
a gate insulating film formed on said active layer; and
a gate electrode comprising a lamination of a valve metal layer and a conductive layer, wherein an end portion of the valve metal layer protrudes outside of the conductive layer, and wherein an oxide layer of the valve metal layer is located on said gate electrode; and
wherein end portion of said oxide layer of the valve metal layer is aligned with an end portion of the gate insulating film. - View Dependent Claims (27, 28, 29, 30, 34)
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Specification