×

Semiconductor device and method of manufacturing the semiconductor device

  • US 6,369,410 B1
  • Filed: 12/15/1998
  • Issued: 04/09/2002
  • Est. Priority Date: 12/15/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising a plurality of TFTs formed on a substrate, each of said TFTs comprising:

  • an active layer comprising at least a channel forming region, and source and drain regions;

    a gate insulating film adjacent to said active layer; and

    a gate electrode comprising a lamination of a tantalum layer and a conductive layer comprising aluminum or aluminum as its main ingredient, wherein a tantalum oxide layer adjacent to the tantalum layer is formed adjacent to the gate insulating film and an end portion of said tantalum oxide layer is aligned with an end portion of said gate insulating film.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×