Low threshold microcavity light emitter
First Claim
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1. A semiconductor device having an exposed AlAs or AlGaAs surface sealed by an oxide formed by a rapid thermal anneal in a dry inert gas containing dry oxygen.
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Abstract
Disclosed is a low threshold vertical cavity surface emitter having a low refraction index confining layer (36) directly in the cavity spacer. This allows a ½ wavelength cavity spacer and lateral size of as low as 2 μm. Also disclosed is a method of rapid temperature annealing to seal a III-V crystal and inhibit oxidative degradation.
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Citations
11 Claims
- 1. A semiconductor device having an exposed AlAs or AlGaAs surface sealed by an oxide formed by a rapid thermal anneal in a dry inert gas containing dry oxygen.
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8. A method of sealing an AlAs layer against oxidative decomposition comprising contacting said layer with a dense surface oxide formed by annealing in a dry inert gas ambient containing dry oxygen at a temperature of from about 400 to about 1000°
- C. for a time sufficient to seal said AlAs layer.
- View Dependent Claims (9, 10, 11)
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