Low threshold microcavity light emitter

• US 6,370,179 B1
• Filed: 12/28/1998
• Issued: 04/09/2002
• Est. Priority Date: 11/12/1996
• Status: Expired due to Fees

• Current Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Original Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Inventors: Deppe, Dennis G., Huffaker, Diana L.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US09/068,591
• Time in Patent Office: 1,198 Days
• Field of Search: 372/45, 372/46, 372/49, 372/96
• US Class Current: 372/96
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18316 Airgap confined
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18338 Non-circular shape of the structure
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity

Abstract

Disclosed is a low threshold vertical cavity surface emitter having a low refraction index confining layer (36) directly in the cavity spacer. This allows a ½ wavelength cavity spacer and lateral size of as low as 2 μm. Also disclosed is a method of rapid temperature annealing to seal a III-V crystal and inhibit oxidative degradation.

Claims

1. A semiconductor device having an exposed AlAs or AlGaAs surface sealed by an oxide formed by a rapid thermal anneal in a dry inert gas containing dry oxygen.

2. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed at a temperature of from about 400 to about 1,000°

C.

3. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed at a temperature of from about 500 to about 600°

C.

4. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed at a temperature of from about 525 to about 550°

C.

5. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed for a period of from about 5 seconds to about 10 minutes.

6. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed for a period of from about 5 seconds to about 1 minute.

7. The semiconductor device of claim 1, wherein said rapid temperature anneal is performed for a period of from about 15 seconds to about 45 seconds.

8. A method of sealing an AlAs layer against oxidative decomposition comprising contacting said layer with a dense surface oxide formed by annealing in a dry inert gas ambient containing dry oxygen at a temperature of from about 400 to about 1000°

C. for a time sufficient to seal said AlAs layer.

9. The method of claim 8, wherein said time is from about 5 seconds to about 5 minutes.

10. The method of claim 8, wherein said dry inert gas is nitrogen, a combination of nitrogen and hydrogen, argon or a combination of argon and hydrogen.

11. The method of claim 9, wherein said hydrogen is present at about 10% v/v.