Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method

• US 6,372,608 B1
• Filed: 04/24/1998
• Issued: 04/16/2002
• Est. Priority Date: 08/27/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi, Shimoda, Tatsuya, Miyazawa, Wakao
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): BRAIRTON, SCOTT A
• Application Number:
  US09/051,966
• Time in Patent Office: 1,453 Days
• Field of Search: 438/106, 438/149, 438/107, 438/455, 438/456, 438/459, 438/460, 148/DIG.93
• US Class Current: 438/455
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for adhering the transferred layer including the thin film device to the transfer member with an adhesive layer therebetween, a step for irradiating the separation layer with light so as to form internal and/or interfacial exfoliation of the separation layer, and a step for detaching the substrate from the separation layer.

Claims

1. An exfoliating method for detaching a detached member disposed on a substrate with a separation layer therebetween, comprising:

irradiating said separation layer with incident light from a side of said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate, and

detaching said detached member from said substrate.

13. The exfoliating method according to claim 1, wherein said substrate has a thermal resistance.

15. The exfoliating method according to claim 1, wherein the exfoliation of said separation layer is caused by an elimination of atoms or molecules or a decrease in an adhering force between atoms or molecules in said separation layer.

16. The exfoliating method according to claim 1, wherein said incident light is laser light.

17. The exfoliating method according to claim 16, wherein said laser light has a wavelength of 100 nm to 350 nm.

18. The exfoliating method according to claim 16, wherein said laser light has a wavelength of 350 nm to 1,200 nm.

19. The exfoliating method according to claim 1, wherein said separation layer comprises amorphous silicon.

20. The exfoliating method according to claim 19, wherein said amorphous silicon contains 2 atomic percent or more of hydrogen (H).

21. The exfoliating method according to claim 1, wherein said separation layer comprises a ceramic.

22. The exfoliating method according to claim 1, wherein said separation layer comprises a metal.

23. The exfoliating method according to claim 1, wherein said separation layer comprises an organic polymer.

24. The exfoliating method according to claim 23, wherein said organic polymer has at least one linking group selected from the group consisting of —

CH₂—

, —

CO—

, —

CONH—

, —

NH—

, —

COO—

, —

N═

N—

, and —

CH═

N—

.

25. The exfoliating method according to claim 23, wherein said organic polymer has an aromatic hydrocarbon group in the chemical formula.

26. The exfoliating method according to claim 1, wherein said separation layer comprises a composite material including a plurality of sub-layers.

27. The exfoliating method according to claim 26, wherein said separation layer comprises at least two sub-layers having different compositions or characteristics.

28. The exfoliating method according to claim 26, wherein said separation layer comprises an optical absorption layer for absorbing said incident light and another layer having a different composition or property from said optical absorption layer.

29. The exfoliating method according to claim 26, wherein said separation layer comprises an optical absorption layer for absorbing said incident light and a shading layer for shading said incident light.

30. The exfoliating method according to claim 29, wherein said shading layer lies at an opposite side of said optical absorption layer from said incident light.

31. The exfoliating method according to claim 29, wherein said shading layer is a reflection layer for reflecting said incident light.

32. The exfoliating method according to claim 31, wherein said reflection layer comprises a metallic thin film.

33. The exfoliating method according to claim 28, wherein the exfoliation of said separation layer occurs by elimination of atoms or molecules or reduction of an adhering force between atoms or molecules in the constituent of said optical absorption layer.

34. The exfoliating method according to claim 26, wherein said separation layer comprises an optical absorption layer comprising amorphous silicon.

35. The exfoliating method according to claim 34, wherein said amorphous silicon contains 2 atomic percent or more of hydrogen (H).

36. The exfoliating method according to claim 26, wherein said separation layer comprises a ceramic.

37. The exfoliating method according to claim 26, wherein said separation layer comprises a metal.

38. The exfoliating method according to claim 26, wherein said separation layer comprises an organic polymer.

39. The exfoliating method according to claim 38, wherein said organic polymer has at least one linking group selected from the group consisting of —

CH₂—

, —

CO—

, —

CONH—

, —

NH—

, —

COO—

, —

N═

N—

, and —

CH═

N—

.

2. An exfoliating method for detaching a detached member disposed on a transparent substrate with a separation layer therebetween, from said transparent substrate, comprising:

irradiating said separation layer with incident light from a side of said transparent substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate, and

detaching said detached member from said substrate.

3. An exfoliating method for detaching a transferred layer, formed on a substrate with a separation layer therebetween, from said substrate, and for transferring said transferred layer onto a transfer member, comprising:

adhering said transfer member to an opposite side of said transferred layer from said substrate,

irradiating said separation layer with incident light from a side of said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate, and

detaching said transferred layer from said substrate thereby transferring said transferred layer onto said transfer member.

7. The exfoliating method according to claim 3, wherein said transferred layer includes a functional thin film or a thin film device.

8. The exfoliating method according to claim 3, wherein said transferred layer includes a thin film transistor.

9. The exfoliating method according to claim 3, wherein said transfer member is a transparent substrate.

10. The exfoliating method according to claim 3, wherein a maximum temperature in forming said transferred layer is Tmax, and said transfer member comprises a material having a glass transition point (Tg) or softening point which is lower than Tmax.

11. The exfoliating method according to claim 3, wherein said transfer member comprises a material having a glass transition point (Tg) or softening point which is lower than 800°

C.

12. The exfoliating method according to claim 3, wherein said transfer member comprises a synthetic resin or glass.

14. The exfoliating method according to claim 3, wherein a maximum temperature in forming said transferred layer is Tmax, and said substrate comprises a material having a distortion point which is lower than Tmax.

4. An exfoliating method for detaching a transferred layer, formed on a transparent substrate with a separation layer therebetween, from said transparent substrate, and for transferring said transferred layer onto a transfer member, comprising:

adhering said transfer member to an opposite side of said transferred layer from said transparent substrate,

irradiating said separation layer with incident light from a side of said transparent substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate, and

detaching said transferred layer from said transparent substrate thereby transferring said transferred layer onto said transfer member.

5. An exfoliating method comprising the steps of:

forming a separation layer on a transparent substrate,

forming a transferred layer on said separation layer directly or with an interlayer therebetween,

adhering said transfer member to an opposite side of said transferred layer from said transparent substrate,

irradiating said separation layer with incident light from a side of said transparent substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate, and

detaching said transferred layer from said transparent substrate thereby transferring said transferred layer onto said transfer member.

6. The exfoliating method according to claim 5, further comprising a step of removing said separation layer formed on said transparent substrate after transferring said transferred layer onto said transfer member.

40. A method for transferring a thin film device on a substrate onto a transfer member comprising the steps of:

forming a separation layer on said substrate;

forming a transferred layer including said thin film device on said separation layer;

adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

irradiating said separation layer with light from a side of said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

detaching said substrate from said separation layer.

52. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said substrate is a transparent substrate, and said separation layer is irradiated with said incident light through said transparent substrate.

53. The method for transferring a transferred layer including a thin film device according to claim 40, said method further comprising a step of removing said separation layer adhered to said transfer member.

54. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said transfer member is a transparent substrate.

55. The method for transferring a transferred layer including a thin film device according to claim 40, wherein a maximum temperature of said transfer member during formation is Tmax, and said transfer member comprises a material having a glass transition point (Tg) or softening point which is lower than Tmax.

56. The method for transferring a transferred layer including a thin film device according to claim 40, wherein a glass transition point (Tg) or softening point of said transfer member is lower than a maximum temperature in forming said thin film device.

57. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said transfer member comprises a synthetic resin or a glass material.

58. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said substrate has heat resistance.

59. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said substrate has a transmittance of 10% or more for light with a wavelength of 310 nm.

60. The method for transferring a transferred layer including a thin film device according to claim 40, wherein a maximum temperature in formation of said transferred layer is Tmax, and said substrate comprises a material having a distortion point of Tmax or more.

61. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises amorphous silicon.

62. The method for transferring a transferred layer including a thin film device according to claim 61, wherein said amorphous silicon contains 2 atomic percent or more of hydrogen (H).

63. The method for transferring a transferred layer including a thin film device according to claim 62, wherein said amorphous silicon contains 10 atomic percent or more of hydrogen (H).

64. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises silicon nitride.

65. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises a hydrogen-containing alloy.

66. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises a nitrogen-containing alloy.

67. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises a multi-layered film.

68. The method for transferring a transferred layer including a thin film device according to claim 67, wherein said multi-layered film comprises an amorphous silicon film and a metallic film formed thereon.

69. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said separation layer comprises at least one material selected from the group consisting of ceramics, metals, and organic polymers.

70. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said light is laser light.

71. The method for transferring a transferred layer including a thin film device according to claim 70, wherein said laser light has a wavelength of 100 nm to 350 nm.

72. The method for transferring a transferred layer including a thin film device according to claim 70, wherein said laser light has a wavelength of 350 nm to 1,200 nm.

73. The method for transferring a transferred layer including a thin film device according to claim 40, wherein said thin film device is a thin film transistor.

74. The thin film device transferred onto said transfer member by a method for transferring described in claim 40.

75. The thin film device according to claim 74, wherein said thin film device is a thin film transistor.

76. A thin film integrated circuit device comprising a thin film device transferred onto said transfer member by a method for transferring described in claim 40.

77. A liquid crystal display device comprising:

a matrix of thin film transistors, a pixel section comprising pixel electrodes each connected to one end of each thin film transistor, and an active matrix substrate produced by transferring the thin film transistors in said pixel section by a method described in claim 40.

41. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming an amorphous silicon layer on said substrate;

a second step of forming said transferred layer including said thin film device on said amorphous silicon layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said amorphous silicon layer with light from a side of said substrate through said substrate causing exfoliation in said amorphous silicon layer and/or at an interface of said amorphous silicon layer and said substrate and thereby decreasing an adhering force between said substrate and said transferred layer; and

a fifth step of detaching said substrate from said amorphous silicon layer;

wherein said transferred layer formed in said second step comprises a thin film transistor, and a thickness of said amorphous silicon layer formed in said first step is smaller than a thickness of a channel layer of said thin film transistor formed in said second step.

44. The method for transferring a transferred layer including a thin film device according to claim 41, wherein in said first step, said amorphous silicon layer is formed by a low pressure chemical vapor deposition process.

42. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming an amorphous silicon layer having a thickness of 25 nm or less on said substrate;

a second step of forming said transferred layer including said thin film device on said amorphous silicon layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said amorphous silicon layer with light from a side of said substrate through said substrate causing exfoliation in said amorphous silicon layer and/or at an interface of said amorphous silicon layer and said substrate to decrease an adhering force between said substrate and said transferred layer; and

a fifth step of detaching said substrate from said amorphous silicon layer.

43. The method for transferring a transferred layer including a thin film device according to claim 42, wherein in said first step, said amorphous silicon layer has a thickness of 11 nm or less.

45. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising the steps of:

forming a separation layer on said substrate;

forming a silicon-based optical absorption layer on said separation layer;

forming said transferred layer including said thin film device on said silicon-based optical absorption layer;

adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

irradiating said separation layer with light from a side of said substrate through said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

detaching said substrate from said separation layer.

46. The method for transferring a transferred layer including a thin film device according to claim 45, wherein said separation layer and said optical absorption layer comprise amorphous silicon, said method further comprising a step for providing a silicon-based intervening layer between said separation layer and said optical absorption layer.

47. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming a separation layer on said substrate;

a second step of forming said transferred layer including said thin film device on said separation layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said separation layer with light from a side of said substrate through said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

a fifth step of detaching said substrate from said separation layer;

wherein, in said fourth step, stress acting on upper layers above said separation layer in the exfoliation in said separation layer and/or at the interface, is absorbed by proof stress of said upper layers above said separation layer to prevent deformation and breakage of said layers above said separation layer.

48. The method for transferring a transferred layer including a thin film device according to claim 47, said method further comprising a step of forming a reinforcing layer for securing said proof stress at a position in said layers above said separation layer, prior to said fourth step.

49. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming a separation layer on said substrate;

a second step of forming said transferred layer including said thin film device on said separation layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said separation layer with light from a side of said substrate through said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

a fifth step of detaching said substrate from said separation layer;

wherein said fourth step includes sequential scanning of N beams for locally irradiating said separation layer, such that a region irradiated by an N-th beam (wherein N is an integer of 1 or more) does not overlap with regions irradiated by other beams.

50. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming a separation layer on said substrate;

a second step of forming said transferred layer including said thin film device on said separation layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said separation layer with light from a side of said substrate through said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

a fifth step of detaching said substrate from said separation layer;

wherein said fourth step includes sequential scanning of N beams for locally irradiating said separation layer, such that each beam has a flat peak region having a maximum optical intensity in a center, and the flat peak region irradiated by the N-th beam (wherein N is an integer of 1 or more) does not overlap with other irradiated flat peak regions irradiated by other beams.

51. A method for transferring a transferred layer including a thin film device on a substrate onto a transfer member comprising:

a first step of forming a separation layer on said substrate;

a second step of forming said transferred layer including said thin film device on said separation layer;

a third step of adhering said transferred layer including said thin film device to said transfer member with an adhesive layer;

a fourth step of irradiating said separation layer with light from a side of said substrate through said substrate causing exfoliation in said separation layer and/or at an interface of said separation layer and said substrate; and

a fifth step of detaching said substrate from said separation layer;

wherein said fourth step includes sequential scanning of N beams for locally irradiating said separation layer, such that each beam has a maximum optical intensity in a central region, and an effective region irradiated by the N-th beam (wherein N is an integer of 1 or more) having an intensity, which is 90% or more of a maximum intensity, does not overlap with other effective regions irradiated by other beams.

78. An exfoliating method for detaching a detached member disposed on a substrate with a separation layer therebetween, from said substrate, comprising:

irradiating said separation layer with incident light from a side of said substrate causing detachment of at least said detached member from said substrate.