Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method

• US 6,372,609 B1
• Filed: 06/02/2000
• Issued: 04/16/2002
• Est. Priority Date: 10/16/1998
• Status: Expired due to Term

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited), Soitec S.A.
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited), Soitec S.A.
• Inventors: Aga, Hiroji, Mitani, Kiyoshi, Tate, Naoto
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): LE, DUNG ANH
• Application Number:
  US09/555,687
• Time in Patent Office: 683 Days
• Field of Search: 438/455, 438/456, 438/457, 438/458, 438/459
• US Class Current: 438/459
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.

Claims

1. A method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed.

2. The method of fabricating an SOI wafer according to claim 1 wherein the above-mentioned heat treatment in a reducing atmosphere is performed at a temperature in the range from 1000°

C. to 1300°

C. for 1 to 60 seconds through use of a rapid heating/rapid cooling apparatus.

3. The method of fabricating an SOI wafer according to claim 2 wherein heat treatment in a reducing atmosphere is performed in 100% hydrogen atmosphere or a mixed atmosphere of hydrogen and argon.

4. The method of fabricating an SOI wafer according to claim 1 wherein heat treatment in a reducing atmosphere is performed in 100% hydrogen atmosphere or a mixed atmosphere of hydrogen and argon.

5. The method of fabricating an SOI wafer according to claim 1 wherein thickness of the oxide film formed on the SOI layer by the above-mentioned heat treatment in an oxidizing atmosphere is twice or more of thickness of the damage layer existing on the surface of the SOI layer before the oxide film is formed.

6. The method of fabricating an SOI wafer according to claim 1 wherein temperature for heat treatment in an oxidizing atmosphere is lower than temperature for heat treatment in a reducing atmosphere.

7. The method of fabricating an SOI wafer according to claim 1 wherein heat treatment in an oxidizing atmosphere is performed at a temperature of 1000°

C. or lower.

8. An SOI wafer fabricated by the method according to claim 1.

9. A method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed.

10. The method of fabricating an SOI wafer according to claim 9 wherein the above-mentioned heat treatment in a reducing atmosphere is performed at a temperature in the range from 1000°

C. to 1300°

C. for 1 to 60 seconds through use of a rapid heating/rapid cooling apparatus.

11. The method of fabricating an SOI wafer according to claim 10 wherein heat treatment in a reducing atmosphere is performed in 100% hydrogen atmosphere or a mixed atmosphere of hydrogen and argon.

12. The method of fabricating an SOI wafer according to claim 9 wherein heat treatment in a reducing atmosphere is performed in 100% hydrogen atmosphere or a mixed atmosphere of hydrogen and argon.

13. The method of fabricating an SOI wafer according to claim 9 wherein thickness of the oxide film formed on the SOI layer by the above-mentioned heat treatment in an oxidizing atmosphere is twice or more of thickness of the damage layer existing on the surface of the SOI layer before the oxide film is formed.

14. The method of fabricating an SOI wafer according to claim 9 wherein temperature for heat treatment in an oxidizing atmosphere is lower than temperature for heat treatment in a reducing atmosphere.

15. The method of fabricating an SOI wafer according to claim 9 wherein heat treatment in an oxidizing atmosphere is performed at a temperature of 1000°

C. or lower.

16. An SOI wafer fabricated by the method according to claim 9.