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Fine pitch bumping with improved device standoff and bump volume

  • US 6,372,622 B1
  • Filed: 10/26/1999
  • Issued: 04/16/2002
  • Est. Priority Date: 10/26/1999
  • Status: Expired due to Term
First Claim
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1. A method for forming a bump structure, comprising:

  • providing a semiconductor device having a bond pad;

    forming a first masking layer overlying the bond pad;

    patterning the first masking layer to form a first opening overlying at least a portion of the bond pad;

    forming a stud at least within the first opening;

    forming a second masking layer overlying the first masking layer;

    patterning the second masking layer to form a second opening overlying at least a portion of the first opening;

    forming a first solder bump at least within the second opening; and

    removing the first masking layer and the second masking layer.

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