Method for selective etching of oxides

• US 6,372,657 B1
• Filed: 08/31/2000
• Issued: 04/16/2002
• Est. Priority Date: 08/31/2000
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hineman, Max F., Torek, Kevin J.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US09/653,554
• Time in Patent Office: 593 Days
• Field of Search: 438/712, 438/723, 438/724, 438/743, 438/744, 438/726, 438/727, 156/345.MW, 134/1.2, 134/1.3, 134/2, 216/67, 216/69, 216/79
• US Class Current: 438/723
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Abstract

An improved dry plasma cleaning process for the removal of native oxides, or other oxide films or growth residue, from openings formed in an insulating layer provided over a semiconductor substrate, without damaging the substrate or significantly affecting the critical dimension of the opening is disclosed. A mixture of nitrogen trifluoride (NF₃), ammonia (NH₃) and oxygen (O₂) is first injected upstream into a microwave plasma source and is exited, and then the plasma is flowed downstream from the plasma source into a reaction chamber containing the substrate.

Claims

1. A method for plasma etching a semiconductor substrate, comprising:

introducing a gaseous mixture containing NH₃, NF₃ and O₂ into a plasma source chamber, said plasma source chamber being situated upstream of a plasma chamber containing a semiconductor substrate;

generating a plasma of said gaseous mixture in said plasma source chamber;

flowing said plasma downstream of said plasma source chamber, and into said plasma chamber; and

contacting said substrate with said plasma.

2. The method of claim 1, wherein said step of contacting said substrate with said plasma further comprises etching said substrate with said gaseous mixture containing NH₃/NF₃/O₂, wherein the flow rate of NH₃ is in the range of 1000-4000 sccm, the flow rate of NF₃ is in the range of 25-200 sccm, and the flow rate of O₂ is in the range of 50-1000 sccm.

3. The method of claim 2, wherein said flow rate of NF₃ and said flow rate of NH₃ are in a ratio of about 1/40.

4. The method of claim 2, wherein said flow rate of NF₃, said flow rate of NH₃, and said flow rate of O₂ are in a ratio of about 1/40/2.

5. The method of claim 2, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 50 sccm, and the flow rate of O₂ is of about 100 sccm.

6. The method of claim 2, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 100 sccm, and the flow rate of O₂ is of about 100 sccm.

7. A method for cleaning a contact opening provided in an insulating layer formed over a substrate, said method comprising:

placing said substrate and said insulating layer into a plasma chamber, said insulating layer having at least one contact opening therein;

introducing a gaseous mixture containing NH₃, NF₃ and O₂ into a plasma source chamber, said plasma source chamber being situated upstream of said plasma chamber;

generating a plasma of said gaseous mixture in said plasma source chamber;

flowing said plasma downstream of said plasma source chamber into said plasma chamber; and

contacting said insulating layer with said plasma to clean at least a bottom of said opening with said plasma.

8. The method of claim 7, wherein said step of contacting said insulating layer further comprises selectively etching said bottom of said opening.

9. The method of claim 7, wherein said step of contacting said insulating layer with said plasma further comprises selectively etching said bottom of said opening with said gaseous mixture containing NH₃, NF₃ and O₂, wherein the flow rate of NH₃ is in the range of 1000-4000 sccm, the flow rate of NF₃ is in the range of 25-200 sccm, and the flow rate of O₂ is in the range of 50-1000 sccm.

10. The method of claim 9, wherein said flow rate of NF₃ and said flow rate of NH₃ are in a ratio of about 1/40.

11. The method of claim 9, wherein said flow rate of NF₃, said flow rate of NH₃, aid said flow rate of O₂ are in a ratio of about 1/40/2.

12. The method of claim 9, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 50 sccm, and the flow rate of O₂ is of about 100 sccm.

13. The method of claim 9, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 100 sccm, and the flow rate of O₂ is of about 100 sccm.

14. A method for removing a native oxide formed inside of a contact opening provided within an insulating layer formed over a semiconductor substrate, said method comprising:

introducing a gaseous mixture containing, NH₃, NF₃ and O₂ into a plasma source chamber, said plasma source chamber being situated upstream of a plasma chamber containing a semiconductor substrate;

generating a plasma of said gaseous mixture into said plasma source chamber;

flowing said plasma downstream of said plasma source chamber, and into said plasma chamber; and

contacting said contact opening with said plasma to remove said native oxide from at least a bottom of said opening.

15. The method of claim 14, wherein said step of contacting said contact opening further comprises selectively etching of said native oxide with said plasma.

16. The method of claim 14, wherein said step of contacting said contact opening with said plasma further comprises selectively etching said native oxide with said gaseous mixture containing, NH₃, NF₃ and O₂, wherein die flow rate of NH₃ is in the range of 1000-4000 sccm, the flow rate of NF₃ is in the range of 25-200 sccm, and the flow rate of O₂ is in the range of 50-1000 sccm.

17. The method of claim 16, wherein said flow rate of NF₃ and said flow rate of NH₃ are in a ratio of about 1/40.

18. The method of claim 16, wherein said flow rate of NF₃, said flow rate of NH₃, and said flow rate of O₂ are in a ratio of about 1/40/2.

19. The method of claim 16, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 50 sccm, and the flow rate of O₂ is of about 100 sccm.

20. The method of claim 16, wherein said flow rate of NH₃ is of about 2000 sccm, the flow rate of NF₃ is of about 100 sccm, and the flow rate of O₂ is of about 100 sccm.

21. A method for etching an undoped oxide provided on a semiconductor substrate relative to a doped oxide provided on said semiconductor substrate, said method comprising:

introducing a gaseous mixture containing NH₃, NF₃ and O₂ into a plasma source chamber, said plasma source chamber being situated upstream of a plasma chamber containing said first and second semiconductor substrate;

generating a plasma of said gaseous mixture in said plasma source chamber;

flowing said plasma downstream of said plasma source chamber, and into said plasma chamber; and

contacting said first and second semiconductor substrates with said plasma.

22. The method of claim 21, wherein said step of contacting said semiconductor substrate with said plasma further comprises etching said semiconductor substrate with said gaseous mixture containing NH₃/NF₃/O₂, wherein the flow rate of NH₃ is in the range of 1000-4000 sccm, the flow rate of NF₃ is in the range of 25-100 sccm, and the flow rate of O₂ is in the range of 50-1000 sccm.

23. The method of claim 22, wherein said flow rate of NF₃ and said flow rate of NH₃ are in a ratio of about 1/40.

24. The method of claim 22, wherein said flow rate of NF₃, said flow rate of NH₃, and said flow rate of O₂ are in a ratio of about 1/40/2.

25. The method of claim 22, wherein said flow rate of NH₃ is of about 2000 sccm, the flow, rate of NF₃ is of about 100 sccm, and the flow rate of O₂ is of about 100 sccm.