Semiconductor device comprising a semiconductor film having substantially no grain boundary
First Claim
1. A semiconductor device comprising:
- at least two thin film transistors formed over a substrate, each of said two thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other and the deviation of the crystal axis is within ±
10°
.
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Accused Products
Abstract
Semiconductor devices based on thin film transistors formed over substrates. In one embodiment, a semiconductor device comprises at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other, and the deviation of the crystal axis is within ±10°.
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Citations
18 Claims
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1. A semiconductor device comprising:
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at least two thin film transistors formed over a substrate, each of said two thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other and the deviation of the crystal axis is within ±
10°
.- View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a rotating angle around a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a rotating angle of a crystal axis of the crystalline semiconductor film of the other, and the deviation of the rotating angle is within ±
10°
.- View Dependent Claims (5, 6)
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7. A semiconductor device comprising:
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at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and wherein a crystal axis of the semiconductor film in one of the two thin film transistors deviate with a crystal axis of the semiconductor film in the other, and the deviation of the crystal axis is within ±
10°
, andwherein a rotating angle around a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a rotating angle of a crystal axis of the crystalline semiconductor film of the other, and the deviation of the rotating angle is within ±
10°
.- View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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at least a pair of complementary n-channel and p-channel thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other, and the deviation of the crystal axis is within ±
10°
.- View Dependent Claims (11, 12)
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13. A semiconductor device comprising:
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at least one pair of n-channel and p-channel thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said thin film transistors has substantially no grain boundary therein, and has a rotating angle around a crystal axis of said crystalline semiconductor thin film in one of said thin film transistors deviates from a rotating angle of a crystal axis the crystalline semiconductor film of the other, and the deviation of the rotating angle is within ±
10°
.- View Dependent Claims (14, 15)
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16. A semiconductor device comprising:
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at least one pair of n-channel and p-channel thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said thin film transistors has substantially no grain boundary therein, and wherein a crystal axis of the semiconductor film in one of the thin film transistors deviate with a crystal axis of the semiconductor film in the other, and the deviation of the crystal axis is within ±
10°
, andwherein a rotating angle around a crystal axis of said crystalline semiconductor film in one of said thin film transistors deviates from a rotating angle of a crystal axis of the crystalline semiconductor film of the other, and the deviation of the rotating angle is within ±
10°
.- View Dependent Claims (17, 18)
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Specification