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Semiconductor device comprising a semiconductor film having substantially no grain boundary

  • US 6,373,075 B1
  • Filed: 10/13/2000
  • Issued: 04/16/2002
  • Est. Priority Date: 03/17/1995
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • at least two thin film transistors formed over a substrate, each of said two thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other and the deviation of the crystal axis is within ±

    10°

    .

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