Field-effect-controllable, vertical semiconductor component, and monolithically integrated half bridge

• US 6,373,097 B1
• Filed: 09/19/1997
• Issued: 04/16/2002
• Est. Priority Date: 09/19/1996
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werner, Wolfgang
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/933,588
• Time in Patent Office: 1,670 Days
• Field of Search: 257/329, 257/341, 257/330, 257/332, 257/334, 257/333
• US Class Current: 257/329
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/781 Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A field-effect-controllable vertical semiconductor component, and a method for producing the same, include a semiconductor body having at least one drain region of a first conduction type, at least one source region of the first conduction type, at least one body region of a second conduction type between the drain regions and the source regions, and at least one gate electrode insulated from the entire semiconductor body by a gate oxide. A gate terminal and a drain terminal are located on a front side of the wafer, and a source terminal is located on a rear side of the wafer. A monolithically integrated half bridge with a low-side switch and a high-side switch includes the field-effect-controllable vertical semiconductor component and a conventional field-effect-controllable vertical semiconductor component.

Claims

1. A field-effect-controllable vertical semiconductor component, comprising:

a semiconductor body having;

front and rear wafer sides;

at least one drain region of a first conduction type;

at least one source region of the first conduction type;

at least one body region of a second conduction type between said at least one drain region and said at least one source region;

said semiconductor body having at least one trench formed therein extending from said front wafer side into said at least one source region;

at least one gate electrode formed in said at least one trench, projecting above said at least one trench and partially overlapping a region of said at least one drain region adjoining said at least one trench;

a gate oxide formed on said front wafer side and in said at least one trench insulating said at least one gate electrode from said entire semiconductor body; and

contact regions embedded in said at least one drain region spaced apart from said at least one trench, said contact regions having the same conduction type as said at least one drain region and having a higher dopant concentration than said at least one drain region;

a gate terminal and a drain terminal disposed on said front wafer side; and

a source terminal disposed on said rear wafer side.

2. The field-effect-controllable vertical semiconductor component according to claim 1, wherein said at least one gate electrode is formed of polysilicon material.

3. The field-effect-controllable vertical semiconductor component according to claim 1, wherein said gate oxide is substantially thinner in the vicinity of said at least one body region and said at least one source region than in the vicinity of said at least one drain region.

4. The field-effect-controllable vertical semiconductor component according to claim 1, wherein said gate oxide is formed of thermal silicon dioxide.

5. The field-effect-controllable vertical semiconductor component according to claim 1, wherein said contact regions are ion-implanted.

6. The field-effect-controllable vertical semiconductor component according to claim 1, including connection regions having the same conduction type as said at least one body region and having a higher dopant concentration than said at least one body region, said first connection regions connecting said at least one body region to a surface of said front wafer side, and a bonding contact wire short-circuiting said connection regions on said wafer surface to said source terminal.

7. The field-effect-controllable vertical semiconductor component according to claim 1, including first and second connection regions of the same conduction type and having a higher doping concentration than said at least one body region and said at least one source region, respectively, said first and second connection regions each connecting a respective one of said at least one body region and said at least one source region to a surface of said front wafer side, and a connecting metallizing on said wafer surface short-circuiting said first and second connection regions.

8. The field-effect-controllable vertical semiconductor component according to claim 1, including trenches filled with conductive material and short-circuiting said at least one body region and said at least one source region.

9. A monolithically integrated half bridge with a low-side switch and a high-side switch, comprising:

a field-effect-controllable vertical semiconductor component; and

a field-effect-controllable vertical semiconductor component including a semiconductor body having;

front and rear wafer sides;

at least one drain region of a first conduction type;

at least one source region of the first conduction type;

at least one body region of a second conduction type between said at least one drain region and said at least one source region;

said semiconductor body having at least one trench formed therein extending from said front wafer side into said at least one source region;

at least one gate electrode formed in said at least one trench, projecting above said at least one trench and partially overlapping a region of said at least one drain region adjoining said at least one trench;

a gate oxide formed on said front wafer side and in said at least one trench insulating said at least one gate electrode from said entire semiconductor body; and

contact regions embedded in said at least one drain region spaced aparat from said trenches, said contact regions having the same conduction type as said at least one drain region and having a higher dopant concentration than said at least one drain region;

a gate terminal and a drain terminal disposed on said front wafer side; and

a source terminal disposed on said rear wafer side.