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Damascene wiring structure and semiconductor device with damascene wirings

  • US 6,373,136 B2
  • Filed: 12/14/2000
  • Issued: 04/16/2002
  • Est. Priority Date: 04/14/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    an integrated circuit structure formed on said semiconductor substrate;

    a multi-layer wiring structure formed above said integrated circuit structure; and

    a number of pads formed on said semiconductor substrate, wherein said multi-layer wiring structure comprises;

    a lower wiring structure;

    an interlayer insulating film covering said lower wiring structure;

    a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench;

    an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and

    a dual damascene wiring formed by filling said wiring trench and said via hole with conductive material.

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