Damascene wiring structure and semiconductor device with damascene wirings
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate;
an integrated circuit structure formed on said semiconductor substrate;
a multi-layer wiring structure formed above said integrated circuit structure; and
a number of pads formed on said semiconductor substrate, wherein said multi-layer wiring structure comprises;
a lower wiring structure;
an interlayer insulating film covering said lower wiring structure;
a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench;
an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and
a dual damascene wiring formed by filling said wiring trench and said via hole with conductive material.
4 Assignments
0 Petitions
Accused Products
Abstract
A damascene wiring structure having: a lower wiring structure; an interlayer insulating film covering the lower wiring structure; a wiring trench formed in the interlayer insulating film from an upper surface thereof, and a via hole passing through the interlayer insulating film from a lower surface of the wiring trench in an inner area thereof and reaching the lower wiring structure, the via hole having a diameter smaller than a width of the wiring trench; an insulating pillar pattern projecting upward from the lower surface of the wiring trench in an area outside of the via hole, the insulating pillar pattern being made of a same material as the interlayer insulating film, wherein a first occupied area factor of the insulating pillar pattern in a first area of the wiring trench near said via hole is higher than a second occupied area factor of the insulating pillar pattern in a second area of the wiring trench remote from the via hole; and a dual damascene wiring formed by filling the wiring trench and said via hole with conductive material. A damascene wiring structure having a high reliability and a semiconductor device having such a damascene wiring structure can be formed.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate;
an integrated circuit structure formed on said semiconductor substrate;
a multi-layer wiring structure formed above said integrated circuit structure; and
a number of pads formed on said semiconductor substrate, wherein said multi-layer wiring structure comprises;
a lower wiring structure;
an interlayer insulating film covering said lower wiring structure;
a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench;
an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and
a dual damascene wiring formed by filling said wiring trench and said via hole with conductive material. - View Dependent Claims (2)
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3. A damascene wiring structure, comprising:
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a lower wiring structure;
an interlayer insulating film covering said lower wiring structure;
a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench;
an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and
a dual damascene wiring formed by embedding said wiring trench and said via hole with conductive material. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification