Electronic semiconductor module

• US 6,373,705 B1
• Filed: 02/13/2001
• Issued: 04/16/2002
• Est. Priority Date: 01/11/1999
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Jacob, Wolfgang, Tschentscher, Harald, Koelle, Gerhard, Rees, Stephan
• Primary Examiner(s): Picard, Leo P.
• Assistant Examiner(s): CHERVINSKY, BORIS LEO
• Application Number:
  US09/623,971
• Time in Patent Office: 427 Days
• Field of Search: 361/689, 361/690, 361/698, 361/699-704, 361/707, 361/718, 361/719, 361/720, 361/715, 361/717, 361/722, 361/760, 361/761, 361/763, 361/783, 361/784, 257/675, 257/706, 257/712-715, 174/15.1, 174/15.2, 174/16.3, 165/80-- 8, 165/104.33, 165/185
• US Class Current: 361/720
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/484 Connecting portions
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01052 Tellurium [Te]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

In order to improve heat dissipation and to reduce parasitic inductivity in an electronic semiconductor module, which has a carrier substrate having an electrically insulating layer, a metal layer in which printed conductors are formed via structuring and which is arranged on the upper side of the insulating layer, and a metal cooling body arranged on the lower side of the insulating layer, and at least one semiconductor component arranged on the carrier substrate, the electrically insulating layer has at least one notch, and at least one terminal face provided on the upper side of the semiconductor component facing away from the carrier substrate is electrically connected to a contact element which is directly connected to the metal cooling body via the notch.

Claims

1. An electronic semiconductor module, comprising:

a carrier substrate including;

an electrically insulating layer including at least one notch,

a metal layer arranged on an upper side of the electrically insulating layer and in which printed conductors are formed via structuring, and

a metal cooling body arranged on a lower side of the electrically insulating layer,

at least one semiconductor component arranged on the carrier substrate;

a contact element directly connected to the metal cooling body via the at least one notch; and

at least one terminal face provided on an upper side of the at least one semiconductor component and facing away from the carrier substrate, the at least one terminal face being electrically connected to the contact element.

2. The electronic semiconductor module according to claim 1, wherein:

the contact element includes a bonding wire connected to the at least one terminal face and to the metal cooling body.

3. The electronic semiconductor module according to claim 1, wherein:

the metal cooling body acts as a potential surface for making available a supply potential required to operate a semiconductor compound.

4. The electronic semiconductor module according to claim 3, wherein:

the supply potential corresponds to a ground potential.

5. The electronic semiconductor module according to claim 1, wherein:

a thickness of the electrically insulating layer is less than 250 μ

m thick.

6. The electronic semiconductor module according to claim 1, further comprising:

a cooling medium to which is coupled the metal cooling body.

7. The electronic semiconductor module according to claim 6, wherein:

the metal cooling body includes cooling channels through which the cooling medium flows.

8. The electronic semiconductor module according to claim 1, further comprising:

a capacitor including a positive terminal connected to a printed conductor of the metal layer and a negative terminal connected to the metal cooling body.