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Apparatus for improving film stability of halogen-doped silicon oxide films

  • US 6,374,770 B1
  • Filed: 06/20/2000
  • Issued: 04/23/2002
  • Est. Priority Date: 10/26/1995
  • Status: Expired due to Fees
First Claim
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1. A chemical vapor deposition system comprising:

  • a housing configured to form a processing chamber;

    a substrate holder configured to hold a substrate within said processing chamber;

    a gas distribution system configured to introduce gases into said processing chamber;

    a plasma generation system configured to form a plasma within said processing chamber;

    a processor operatively coupled to control said gas distribution system and said plasma generation system; and

    a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising;

    instructions that control said gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into said chamber to deposit a halogen-doped silicon oxide film on said substrate; and

    instructions to control said gas distribution system and plasma generation system to densify said halogen-doped silicon oxide film by bombarding said film with ionic species from a plasma of an argon-containing gas source.

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