Method of manufacturing flexible display with transfer from auxiliary substrate

• US 6,376,333 B1
• Filed: 02/14/2000
• Issued: 04/23/2002
• Est. Priority Date: 02/16/1995
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): PERT, EVAN T
• Application Number:
  US09/503,531
• Time in Patent Office: 799 Days
• Field of Search: 438/166, 438/34, 438/29, 438/30, 438/149, 438/151, 438/164, 438/455, 438/458, 438/406, 438/DIG.977, 349/45, 257/72
• US Class Current: 438/458
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering;

forming a thin film transistor for an active matrix over said buffer insulating film;

forming a sealing layer over said thin film transistor;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property;

removing said peeling layer to peel off said first substrate; and

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.

2. The method of claim 1 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

3. The method of claim 1 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

4. The method of claim 1 wherein said semiconductor device is a liquid crystal display.

5. The method of claim 1 wherein said semiconductor device is an EL display.

6. The method of claim 1 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

37. The method of claim 1 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

38. The method of claim 37 wherein said resin spacer is formed into a columnar shape.

49. The method of claim 1 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.

7. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering;

forming a thin film transistor for an active matrix over said buffer insulating film;

forming a sealing layer over said thin film transistor;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property; and

removing said peeling layer by using an etching solvent to peel off said first substrate; and

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.

8. The method of claim 7 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

9. The method of claim 7 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

10. The method of claim 7 wherein said semiconductor device is a liquid crystal display.

11. The method of claim 7 wherein said semiconductor device is an EL display.

36. The method of claim 7 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

39. The method of claim 7 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

40. The method of claim 39 wherein said resin spacer is formed into a columnar shape.

50. The method of claim 7 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.

12. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer;

forming a thin film transistor for an active matrix over said buffer insulating film;

forming a sealing layer over said thin film transistor;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property;

removing said peeling layer by using an etching solvent to peel off said first substrate; and

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed,

wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.

13. The method of claim 12 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

14. The method of claim 12 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

15. The method of claim 12 wherein said semiconductor device is a liquid crystal display.

16. The method of claim 12 wherein said semiconductor device is an EL display.

17. The method of claim 12 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

41. The method of claim 12 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

42. The method of claim 41 wherein said resin spacer is formed into a columnar shape.

51. The method of claim 12 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.

18. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate having a groove formed in a surface thereof, said peeling layer being formed by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer;

forming an electrode arrangement over said buffer insulating film;

forming a sealing layer over said electrode arrangement;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property;

removing said peeling layer by using an etching solvent to peel off said first substrate; and

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed,

wherein a gap is defined between a bottom portion of said groove and said peeling layer, and said etching solvent enters said gap.

19. The method of claim 18 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

20. The method of claim 18 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

21. The method of claim 18 wherein said semiconductor device is a liquid crystal display.

22. The method of claim 18 wherein said semiconductor device is an EL display.

23. The method of claim 18 further comprising the step of forming a thin film transistor for an active matrix between said buffer insulating film and said sealing layer, wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

43. The method of claim 18 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

44. The method of claim 43 wherein said resin spacer is formed into a columnar shape.

52. The method of claim 18 wherein said electrode arrangement comprises a pixel electrode.

24. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering;

forming an electrode arrangement over said buffer insulating film;

forming a sealing layer over said electrode arrangement;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property;

removing said peeling layer to peel off said first substrate;

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.

25. The method of claim 24 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

26. The method of claim 24 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

27. The method of claim 24 wherein said semiconductor device is a liquid crystal display.

28. The method of claim 24 wherein said semiconductor device is an EL display.

29. The method of claim 24 further comprising the step of forming a thin film transistor for an active matrix between said buffer insulating film and said sealing layer, wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

45. The method of claim 24 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

46. The method of claim 45 wherein said resin spacer is formed into a columnar shape.

53. The method of claim 24 wherein said electrode arrangement comprises a pixel electrode.

30. A method of manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate comprising quartz by a silicon oxide base film formation coating solution;

forming a buffer insulating film comprising a silicon base insulator over said peeling layer by plasma chemical vapor deposition or sputtering;

forming a thin film transistor for an active matrix over said buffer insulating film;

forming a sealing layer over said thin film transistor;

disposing a second substrate over said sealing layer, said second substrate comprising a resin having a translucent property;

removing said peeling layer to peel off said first substrate;

bonding a third substrate comprising a resin to a side from which said peeling layer has been removed.

31. The method of claim 30 wherein said silicon oxide base film formation coating solution comprises a silanol base monomer resolved in an organic solvent, a silanol base oligomer resolved in an organic solvent, or a fine particle of silicon oxide dispersed in an organic solvent.

32. The method of claim 30 wherein said sealing layer comprises a material selected from the group consisting of an epoxy resin, an acrylic resin and a polyimide resin.

33. The method of claim 30 wherein said semiconductor device is a liquid crystal display.

34. The method of claim 30 wherein said semiconductor device is an EL display.

35. The method of claim 30 wherein said thin film transistor comprises an active layer comprising a crystalline silicon.

47. The method of claim 30 further comprising the step of forming a resin spacer between said buffer insulating film and said third substrate.

48. The method of claim 47 wherein said resin spacer is formed into a columnar shape.

54. The method of claim 30 further comprising the step of forming a pixel electrode between said second substrate and said buffer insulating film.