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Epitaxial SiOx barrier/insulation layer

  • US 6,376,337 B1
  • Filed: 11/09/1998
  • Issued: 04/23/2002
  • Est. Priority Date: 11/10/1997
  • Status: Expired due to Fees
First Claim
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1. A method for producing an insulating or barrier layer, useful for semiconductor devices, on a silicon substrate, which comprises depositing a layer of silicon and at least one additional element on said silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer.

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