Epitaxial SiOx barrier/insulation layer

• US 6,376,337 B1
• Filed: 11/09/1998
• Issued: 04/23/2002
• Est. Priority Date: 11/10/1997
• Status: Expired due to Fees

• Current Assignee: Nanodynamics, Inc.
• Original Assignee: Nanodynamics, Inc.
• Inventors: Wang, Chia-Gee, Tsu, Raphael, Lofgren, John Clay
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US09/188,586
• Time in Patent Office: 1,261 Days
• Field of Search: 438/404, 438/413, 438/787, 438/478, 438/479
• US Class Current: 438/478
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/76248 using lateral overgrowth techniques, i.e. ELO techniques
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for producing an insulating or barrier layer, useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on said silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.

Claims

1. A method for producing an insulating or barrier layer, useful for semiconductor devices, on a silicon substrate, which comprises depositing a layer of silicon and at least one additional element on said silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer.

2. A method according to claim 1, wherein said additional element is selected from the group consisting of oxygen, carbon, nitrogen, phosphorus, sulfur, hydrogen, antimony and arsenic, and combinations thereof.

3. A method according to claim 1, wherein said additional element is oxygen.

4. A method according to claim 3, wherein said deposited layer comprises SiO_x wherein 0<

x<

2.0.

5. A method according to claim 4, wherein silicon and oxygen are deposited simultaneously.

6. A method according to claim 1, wherein silicon and said at least one additional element are deposited simultaneously.

7. A method according to claim 1, wherein said deposited layer is essentially epitaxial.

8. A method according to claim 1, wherein the surface of said silicon substrate is epitaxial.

9. A method according to claim 1, wherein a plurality of insulating layers are deposited to form a barrier comprising a plurality of insulating layers sandwiched between epitaxial silicon.

10. A method according to claim 9, wherein said additional elements comprise oxygen and at least one other of said additional elements.

11. A method according to claim 10, wherein oxygen is diffused into said deposited layer and is trapped by said at least one other of said additional elements.

12. A method according to claim 11, wherein the produced barrier is annealed in an oxygen atmosphere.

13. A method according to claim 9, wherein the values of dielectric constant and barrier height of the produced barrier are adjusted to desired values by controlling the oxygen content of said barrier.

14. A method according to claim 9, wherein a barrier with a controlled gradient of oxygen content is produced by adjusting the oxygen content of said insulating layers.