Laser cutting of semiconductor materials

• US 6,376,797 B1
• Filed: 07/26/2000
• Issued: 04/23/2002
• Est. Priority Date: 07/26/2000
• Status: Expired due to Term

• Current Assignee: US Department of Energy (Government of the United States of America)
• Original Assignee: ASE Americas Incorporated
• Inventors: Kalejs, Juris P., Piwczyk, Bernhard P.
• Primary Examiner(s): Heinrich, Samuel M.
• Application Number:
  US09/626,708
• Time in Patent Office: 636 Days
• Field of Search: 219/121.67, 219/121.68, 219/121.69, 219/121.7, 219/121.71, 219/121.72, 219/121.84, 219/121.86
• US Class Current: 219/121.72
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/12 in a special atmosphere, e.g. in an enclosure
• CPC Class Codes: B23K 26/1224 in vacuum
• CPC Class Codes: B23K 26/123 in an atmosphere of particular gases
• CPC Class Codes: B23K 26/125 of mixed gases
• CPC Class Codes: B23K 26/127 in an enclosure
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 21/02035 Shaping
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A method of cutting thin bodies of silicon so as to minimize edge damage comprises traversing said bodies with the beam of a pulsed laser in a vacuum or in the presence of forming gas or a noble gas.

Claims

1. A method of cutting a hollow semi-conductor body of silicon into wafers for use in making solid state electronic devices, comprising cutting through said semi-conductor body with a short pulse laser in a vacuum or in a gaseous environment consisting substantially of one or more of the following gases:

forming gas and noble gases.

2. A method according to claim 1 wherein substantially all of said gaseous medium comprises a noble gas.

3. A method according to claim 1 wherein substantially all of said gaseous medium consists of one or more of the following gases:

forming gas, helium, argon, neon and krypton.

4. A method according to claim 1 wherein substantially all of said gaseous medium comprises helium.

5. A method according to claim 1 wherein substantially all of said gaseous medium comprises argon.

6. A method according to claim 1 wherein said cutting is accomplished using a Nd:

YAG laser.

7. A method according to claim 6 wherein said laser has a 50 Hz pulse repetition rate.

8. A method according to claim 7 wherein said laser has a 10 ns pulse duration.

9. A method according to claims 1 wherein substantially all of said gaseous medium comprises one or more of the following gases:

forming gas, helium, argon, neon, krypton, and xenon, and further wherein said laser is Nd;

YAG laser that produces a laser beam having a pulse repetition rate in the order of 50 Hz and a pulse duration in the order of 10 ns.

10. A method according to claim 1 further including the steps of supporting said hollow body, and operating said laser so as to provide a laser beam that traverses said hollow body in selected horizontal and vertical paths so as to cut out rectangular wafers from said hollow body.

11. A method according to claim 1 wherein said silicon body has a wall thickness in the range of 100 to 700 μ

m.

12. A method of cutting a hollow semi-conductor body of silicon into wafers for use in making solid state electronic devices, comprising the steps of:

surrounding said semi-conductor body with a collar so as to define an annular space surrounding said body,

injecting a gas consisting of one or more gases from the group consisting of forming gas and the noble gases He, Ne, Ar and Kr into said annular space; and

cutting said semi-conductor body by means of a short pulse length laser that is operated so as to beam laser energy pulses through said annular space to said semi-conductor body, whereby laser cutting of said semi-conductor body is conducted in the presence of said gas.

13. A method according to claim 12 wherein said collar has a window that is transparent to laser energy, and further wherein said laser pulses are directed through said window at said semi-conductor body.

14. A method according to claim 12 wherein said hollow body has a thickness in the range of 100 to 700 μ

m.

15. A method of cutting a semi-conductor body comprising the steps of:

passing a laser energy beam through a gas assist nozzle so that said laser energy beam impinges upon and cuts through a selected portion of said semiconductor body; and

simultaneously injecting a gas from the group consisting of forming gas and the noble gases He, Ne, Ar and Kr into said gas assist nozzle and discharging a stream of said gas from said nozzle concurrently with said laser energy beam, with said stream of gas being directed so as to contact said selected portion of said semiconductor body as said selected portion is being cut by said laser beam.

16. A method according to claim 15 wherein said laser energy beam is produced by a short pulse laser.

17. A method according to claim 16 wherein said laser is a Nd:

YAG laser and said semi-conductor body is silicon.

18. A method according to claim 15 where said cutting is conducted so as to cut four-sided wafers out of said semi-conductor body.

19. A method according to claim 15 wherein said hollow body has a thickness in the range of 100 to 700 μ

m.

20. A method of cutting a semi-conductor body comprising the steps of:

placing said body in a vessel having a window that is transparent to laser energy and evacuating said vessel so that said body is in an air-free environment; and

passing laser energy beam through said window into said vessel to said semi-conductor body and causing said laser energy beam to traverse said semiconductor body so that said laser energy beam will cut out portions of said semiconductor body.

21. A method according to claim 20 wherein said laser energy beam is produced by a Nd:

YAG laser and said beam operates to cut wafers out of said body.

22. A method according to claim 21 wherein said body is made of P-doped on.

23. A method according to claim 20 wherein said semiconductor body is made of silicon.

24. A method of cutting a hollow semi-conductor body of silicon into wafers for use in making solid state electronic devices, comprising the steps of:

using a short pulse laser to make a series of circumferentially-spaced first cuts in said semiconductor body, with said first cuts commencing at an end edge of said body and extending longitudinally of said body;

using a short pulse laser to make circumferentially-extending second cuts in said semiconductor body, with said second cuts intersecting said first cuts so as to separate a plurality of wafers from said body,

characterized in that said first and second cuts are made in a gaseous environment consisting substantially of one or more of the following gases;

forming gas and noble gases.

25. A method according to claim 24 wherein said body has a wall thickness in the range of 100 to 700 μ

m and said laser is Nd;

YAG laser.

26. A method according to claim 25 wherein said laser has a pulse duration in the order of 10 ns and a pulse repetition rate in the order of 50 Hz.